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| 型号： | NTMD6P02R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CHAN DUAL 20V 8SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 6.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 16V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD6P02R2GOSDKR |
NTMD6P02, NVMD6P02
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)*
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 20 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = ? 20 Vdc, V GS = 0 Vdc, T J = 70 ° C)
Gate ? Body Leakage Current
(V GS = ? 12 Vdc, V DS = 0 Vdc)
Gate ? Body Leakage Current
(V GS = +12 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
? 20
?
?
?
?
?
?
? 11.6
?
?
?
?
?
?
? 1.0
? 5.0
? 100
100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = ? 4.5 Vdc, I D = ? 6.2 Adc)
(V GS = ? 2.5 Vdc, I D = ? 5.0 Adc)
(V GS = ? 2.5 Vdc, I D = ? 3.1 Adc)
Forward Transconductance (V DS = ? 10 Vdc, I D = ? 6.2 Adc)
V GS(th)
R DS(on)
g FS
? 0.6
?
?
?
?
?
? 0.88
2.6
0.027
0.038
0.038
15
? 1.20
?
0.033
0.050
?
?
Vdc
mV/ ° C
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1380
1700
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
515
250
775
450
SWITCHING CHARACTERISTICS (Notes 5 and 6)
Turn ? On Delay Time
t d(on)
?
15
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = ? 10 Vdc, I D = ? 1.0 Adc,
V GS = ? 10 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
20
85
50
50
125
110
Turn ? On Delay Time
t d(on)
?
17
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = ? 16 Vdc, I D = ? 6.2 Adc,
V GS = ? 4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
65
50
80
?
?
?
Total Gate Charge
Gate ? Source Charge
Gate ? Drain Charge
(V DS = ? 16 Vdc,
V GS = ? 4.5 Vdc,
I D = ? 6.2 Adc)
Q tot
Q gs
Q gd
?
?
?
20
4.0
8.0
35
?
?
nC
BODY ? DRAIN DIODE RATINGS (Note 5)
Diode Forward On ? Voltage
Diode Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = ? 1.7 Adc, V GS = 0 Vdc)
(I S = ? 1.7 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = ? 6.2 Adc, V GS = 0 Vdc)
(I S = ? 6.2 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = ? 1.7 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
V SD
t rr
t a
t r
Q RR
?
?
?
?
?
?
?
?
? 0.80
? 0.65
? 0.95
? 0.80
50
20
30
0.04
? 1.2
?
?
?
80
?
?
?
Vdc
Vdc
ns
m C
5. Indicates Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
*Handling precautions to protect against electrostatic discharge are mandatory.
http://onsemi.com
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