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| 型号： | NTMFS4854NST1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 15.2A SO-8FL |
| 标准包装： | 1,500 |
| 系列： | SENSEFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 85nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 4830pF @ 12V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | SO-8FL |
| 包装： | 带卷 (TR) |
NTMFS4854NS
SENSEFET ? Power MOSFET
25 V, 149 A, Single N ? Channel, SO ? 8 FL
Features
? Accurate, Lossless Current Sensing
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
25 V
http://onsemi.com
R DS(ON) MAX
2.5 m W @ 10 V
3.9 m W @ 4.5 V
DRAIN
I D MAX
149 A
119 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value
Unit
GATE
Kelvin
Drain ? to ? Source Voltage
V DSS
25
V
SENSE SOURCE
4854NS
S
SENSE
SO ? 8 FLAT LEAD S
KELVIN
G
K1
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2) Steady
State
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
V GS
I D
P D
ID
P D
I D
P D
± 16
24.4
17.6
2.31
15.2
11
0.9
149
107.5
86.2
V
A
W
A
W
A
W
MARKING
DIAGRAM
D (Do Not Connect)
S NC
1
AYWZZ
CASE 506BQ
D (Do Not Connect)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Pulsed Drain T A = 25 ° C,
Current t p = 10 m s
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
I DM
T J , T STG
I S
dV/dt
298
? 55 to
+150
71
6
A
° C
A
V/ns
Device
NTMFS4854NST1G
NTMFS4854NST3G
Package
SO ? 8 FL
(Pb ? Free)
SO ? 8 FL
(Pb ? Free)
Shipping ?
1500 Tape / Reel
5000 Tape / Reel
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 20 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
200
260
mJ
° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 1
1
Publication Order Number:
NTMFS4854NS/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4854NST3G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4897NF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL |
| NTMFS4897NFT1G | 功能描述:MOSFET NFET SO8FL 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4897NFT3G | 功能描述:MOSFET NFET SO8FL 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4898NF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL |
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