- 您现在的位置：买卖IC网 > Datasheet目录491 > NTMS3P03R2G (ON Semiconductor)MOSFET P-CH 30V 2.34A 8-SOIC Datasheet资料下载
参数资料
| 型号： | NTMS3P03R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.34A 8-SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 24V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMS3P03R2GOS |
NTMS3P03R2
MAXIMUM RATINGS
Rating
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance -
Junction-to-Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - Starting T J = 25 ° C
(V DD = -30 Vdc, V GS = -4.5 Vdc, Peak I L = -7.5 Apk, L = 5 mH, R G = 25 W )
Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds
Symbol
V DSS
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
T L
Value
-30
± 20
171
0.73
-2.34
-1.87
-8.0
100
1.25
-3.05
-2.44
-12
62.5
2.0
-3.86
-3.1
-15
- 55 to +150
140
260
Unit
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR-4 or G-10 PCB, t = steady state.
2. Mounted onto a 2 ″ square FR-4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided), t = steady state.
3. Mounted onto a 2 ″ square FR-4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTMS4107NR2G | MOSFET N-CH 30V 11A 8SOIC |
| NTMS4176PR2G | MOSFET P-CH 30V 5.5A 8-SOIC |
| NTMS4177PR2G | MOSFET P-CH 30V 6.6A 8-SOIC |
| NTMS4503NR2 | MOSFET N-CH 28V 9A 8-SOIC |
| NTMS4705NR2G | MOSFET N-CH 30V 7.4A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4101PR2 | 功能描述:MOSFET P-CH 20V 6.9A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTMS4107N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, Single N−Channel, SO−8 |
| NTMS4107NR2 | 功能描述:MOSFET 30V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4107NR2G | 功能描述:MOSFET NFET 19A 30V 3.4MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4176P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。