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| 型号： | NTMS3P03R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.34A 8-SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 24V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMS3P03R2GOS |
NTMS3P03R2
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(V GS = 0 Vdc, I D = -250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = -30 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = -30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
V (BR)DSS
I DSS
-30
-
-
-
-
-30
-
-
-
-
-1.0
-10
Vdc
mV/ ° C
m Adc
Gate-Body Leakage Current
I GSS
nAdc
(V GS = -20 Vdc, V DS = 0 Vdc)
Gate-Body Leakage Current
(V GS = +20 Vdc, V DS = 0 Vdc)
I GSS
-
-
-
-
-100
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = -250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
-1.0
-
-1.7
3.6
-2.5
-
Vdc
Static Drain-to-Source On-State Resistance
R DS(on)
W
(V GS = -10 Vdc, I D = -3.05 Adc)
(V GS = -4.5 Vdc, I D = -1.5 Adc)
-
-
0.063
0.090
0.085
0.115
Forward Transconductance (V DS = -15 Vdc, I D = -3.05 Adc)
g FS
-
5.0
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
-
520
750
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = -24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
-
-
170
70
325
135
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn-On Delay Time
t d(on)
-
12
22
ns
Rise Time
Turn-Off Delay Time
Fall Time
(V DD = -24 Vdc, I D = -3.05 Adc,
V GS = -10 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
-
-
-
16
45
45
30
80
80
Turn-On Delay Time
t d(on)
-
16
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
(V DD = -24 Vdc, I D = -1.5 Adc,
V GS = -4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
-
-
-
42
32
35
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V DS = -24 Vdc,
V GS = -10 Vdc,
I D = -3.05 Adc)
Q tot
Q gs
Q gd
-
-
-
16
2.0
4.5
25
-
-
nC
BODY-DRAIN DIODE RATINGS (Note 6)
Diode Forward On-Voltage
Reverse Recovery Time
(I S = -3.05 Adc, V GS = 0 V)
(I S = -3.05 Adc, V GS = 0 V, T J = 125 ° C)
(I S = -3.05 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
-
-
-
-
-0.96
-0.78
34
18
-1.25
-
-
-
Vdc
ns
t b
-
16
-
Reverse Recovery Stored Charge
Q RR
-
0.03
-
m C
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
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