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| 型号： | NTMS4107NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11A 8SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 15V |
| 功率 - 最大： | 930mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS4107NR2GOSCT |
NTMS4107N
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NTMS4107N/D
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相关代理商/技术参数 |
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| NTMS4176P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 |
| NTMS4176PR2G | 功能描述:MOSFET PFET SO8 30V 9.6A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4177P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 |
| NTMS4177PR2G | 功能描述:MOSFET PFET SO8 30V 9.6A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4404 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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