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| 型号： | NTMS4706NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.4A 8-SOIC |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 10.3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 24V |
| 功率 - 最大： | 830mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4706N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
50
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
?4.8
2.5
V
mV/ ° C
Coefficient
Drain?to?Source On Resistance
R DS(on)
V GS = 10 V, I D = 10.3 A
9.0
12
m W
V GS = 4.5 V, I D = 10 A
11.4
15
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
19
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
950
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 24 V
400
100
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V, I D = 10 A
10
1.25
2.4
4.5
1.82
15
nC
W
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
7.5
12
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 15 V, I D = 1.0 A,
R G = 3.0 W
4.0
24
14
8.0
40
25
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 2.1 A
T J = 25 ° C
T J = 125 ° C
0.74
0.57
1.0
V
Reverse Recovery Time
t RR
34
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.1 A
16
18
Reverse Recovery Charge
Q RR
29
nC
3. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
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| NTMS4800N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 |
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| NTMS4801NR2G | 功能描述:MOSFET NFET SO8 30V 9.9A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4802N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, N−Channel, SO−8 |
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