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参数资料
| 型号： | NTMSD3P102R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.34A 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 Product Obsolescence 06/Oct/2006 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD3P102R2OS |
NTMSD3P102R2
PACKAGE DIMENSIONS
SO-8 NB
CASE 751-07
ISSUE AH
NOTES:
-X-
8
A
5
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
-Y-
B
1
4
S
0.25 (0.010)
M
Y
M
K
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
G
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
-Z-
C
SEATING
PLANE
N
X 45 _
A
B
C
D
G
4.80 5.00
3.80 4.00
1.35 1.75
0.33 0.51
1.27 BSC
0.189 0.197
0.150 0.157
0.053 0.069
0.013 0.020
0.050 BSC
0.10 (0.004)
H
0.10 0.25
0.004 0.010
H
D
0.25 (0.010)
M
Z Y
S
X
S
M
J
J
K
M
N
S
0.19 0.25
0.40 1.27
0 _ 8 _
0.25 0.50
5.80 6.20
0.007 0.010
0.016 0.050
0 _ 8 _
0.010 0.020
0.228 0.244
STYLE 18:
SOLDERING FOOTPRINT*
1.52
0.060
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
7.0
0.275
0.6
0.024
4.0
0.155
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY is a registered trademark of International Rectifier Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
?Literature Distribution Center for ON Semiconductor
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? Phone : 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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http://onsemi.com
9
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMD3P102R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMSD3P102R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY? |
| NTMSD3P102R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package |
| NTMSD3P102R2G | 功能描述:MOSFET -20V -3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P102R2SG | 功能描述:MOSFET FETKY 20V .085R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
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