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| 型号： | NTMSD6N303R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A 8-SOIC |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD6N303R2OS |
NTMSD6N303,
NVMSD6N303
Power MOSFET
6 Amps, 30 Volts
N ? Channel SO ? 8 FETKY t
8
1
AYWW G
G
The FETKY product family incorporates low R DS(on) MOSFETs
packaged with an industry leading, low forward drop, low leakage
Schottky Barrier rectifier to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
? These Devices are Pb ? Free and are RoHS Compliant
? NVMSD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
Applications
? Buck Converter
? Buck ? Boost
? Synchronous Rectification
? Low Voltage Motor Control
? Battery Packs
? Chargers
? Cell Phones
MOSFET MAXIMUM RATINGS
(T J = 25 ° C unless otherwise noted) (Note 1)
Rating Symbol Value Unit
http://onsemi.com
MOSFET
6.0 AMPERES
30 VOLTS
24 m W @ V GS = 10 V (Typ)
SCHOTTKY DIODE
6.0 AMPERES
30 VOLTS
420 mV @ I F = 3.0 A
1 8
A C
2 7
A C
6
S D
3
G D
4 5
(TOP VIEW)
MARKING DIAGRAM &
PIN ASSIGNMENT
C C D D
8
E6N3x
SO ? 8
CASE 751
STYLE 18 1
A A S G
E6N3 = Device Code
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
Drain Current ? (Note 2)
? Continuous @ T A = 25 ° C
? Single Pulse (tp ≤ 10 m s)
V DSS
V DGR
V GS
I D
I DM
30
30
" 20
6.0
30
Vdc
Vdc
Vdc
Adc
Apk
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Total Power Dissipation @ T A = 25 ° C P D 2.0 Watts
(Note 2)
Single Pulse Drain ? to ? Source Avalanche E AS 325 mJ
Energy ? Starting T J = 25 ° C
(V DD = 30 Vdc, V GS = 5.0 Vdc,
V DS = 20 Vdc, I L = 9.0 Apk,
L = 10 mH, R G = 25 W )
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width ≤ 250 m s, Duty Cycle ≤ 2.0%.
2. Mounted on 2 ″ square FR4 board
(1 in sq, 2 oz. Cu 0.06 ″ thick single sided), 10 sec. max.
ORDERING INFORMATION
Device Package Shipping ?
NTMSD6N303R2G SO ? 8 2500/Tape & Reel
(Pb ? Free)
NTMSD6N303R2SG SO ? 8 2500/Tape & Reel
(Pb ? Free)
NVMSD6N303R2G SO ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 3
1
Publication Order Number:
NTMSD6N303R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMSD6N303R2G | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
| NTN22 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTN32 | 制造商:OTAX Corporation 功能描述: |
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