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参数资料
| 型号： | NTMSD6N303R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A 8-SOIC |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD6N303R2OS |
NTMSD6N303, NVMSD6N303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current (Note 3)
(Rated V R ) T A = 104 ° C
Peak Repetitive Forward Current (Note 3)
(Rated V R , Square Wave, 20 kHz) T A = 108 ° C
Non ? Repetitive Peak Surge Current
(Surge applied at rated load conditions, half ? wave, single phase, 60 Hz)
Symbol
V RRM
V R
I O
I frm
I fsm
Value
30
2.0
4.0
30
Unit
Volts
Amps
Amps
Amps
THERMAL CHARACTERISTICS ? SCHOTTKY AND MOSFET
Thermal Resistance ? Junction ? to ? Ambient (Note 4) ? MOSFET
Thermal Resistance ? Junction ? to ? Ambient (Note 5) ? MOSFET
Thermal Resistance ? Junction ? to ? Ambient (Note 3) ? MOSFET
Thermal Resistance ? Junction ? to ? Ambient (Note 4) ? Schottky
Thermal Resistance ? Junction ? to ? Ambient (Note 5) ? Schottky
Thermal Resistance ? Junction ? to ? Ambient (Note 3) ? Schottky
Operating and Storage Temperature Range
R q JA
R q JA
R q JA
R q JA
R q JA
R q JA
T J , T stg
167
97
62.5
197
97
62.5
? 55 to +150
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Mounted on 2 ″ square FR4 board (1 in sq, 2 oz. Cu 0.06 ″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2 ″ square FR4 board (1 in sq, 2 oz. Cu 0.06 ″ thick single sided), Steady State.
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristics
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 6)
I F = 100 mAdc
I F = 3.0 Adc
I F = 6.0 Adc
V F
T J = 25 ° C
0.28
0.42
0.50
T J = 125 ° C
0.13
0.33
0.45
Volts
Maximum Instantaneous Reverse Current (Note 6)
V R = 30 V
I R
T J = 25 ° C
250
?
T J = 125 ° C
?
25
m A
mA
Maximum Voltage Rate of Change
V R = 30 V
dV/dt
10,000
V/ m s
6. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMSD6N303R2G | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
| NTN22 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTN32 | 制造商:OTAX Corporation 功能描述: |
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