参数资料
型号: NTP75N06L
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 60V 75A TO-220AB
产品变化通告: Product Obsolescence 30/Dec/2003
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 37.5A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 92nC @ 5V
输入电容 (Ciss) @ Vds: 4370pF @ 25V
功率 - 最大: 2.4W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP75N06LOS
NTP75N06L, NTB75N06L
12000
6
10000
8000
V DS = 0 V
C iss
V GS = 0 V
T J = 25 ° C
5
4
Q 1
Q T
Q 2
V GS
6000
4000
C rss
C iss
C oss
3
2
2000
C rss
1
I D = 75 A
T J = 25 ° C
0
10
5
V GS 0 V DS 5
10
15 20
25
0
0
10
20
30
40
50
60
70
GATE?TO?SOURCE OR DRAIN?TO?SOURCE (V)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage vs. Total Charge
1000
V DS = 30 V
I D = 75 A
80
70
V GS = 0 V
T J = 25 ° C
V GS = 5 V
60
100
t r
t f
50
40
30
t d(off)
20
10
10
t d(on)
0
1
10
100
0.6
0.64 0.68 0.72 0.76
0.8
0.84 0.86 0.92 0.96
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
V GS = 15 V
SINGLE PULSE
10 m s
1000
I D = 75 A
T C = 25 ° C
800
100
600
100 m s
1 ms
400
10
10 ms
1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
200
0
0.1
1
10
100
25
50
75
100
125
150
175
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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