- 您现在的位置：买卖IC网 > Datasheet目录492 > NTP75N06 (ON Semiconductor)MOSFET N-CH 60V 75A TO220AB Datasheet资料下载
参数资料
| 型号： | NTP75N06 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 75A TO220AB |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4510pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP75N06OS |
NTP75N06, NTB75N06,
NTBV75N06
Power MOSFET
75 Amps, 60 Volts, N ? Channel
TO ? 220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? These Devices are Pb ? Free and are RoHS Compliant
? NTBV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
http://onsemi.com
75 AMPERES, 60 VOLTS
R DS(on) = 9.5 m W
N ? Channel
D
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING
DIAGRAMS
4
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GS
Value
60
60
" 20
" 30
Unit
Vdc
Vdc
Vdc
4
TO ? 220
CASE 221A
STYLE 5
Drain
75N06
AYWW
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
I D
I D
I DM
P D
75
50
225
214
1.4
2.4
Adc
Apk
W
W/ ° C
W
1
2
3
1
Gate
2
Drain
4
Drain
3
Source
Operating and Storage Temperature Range
T J , T stg
? 55 to
+175
° C
4
D 2 PAK
75N06
1
Gate
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc, L = 0.3 mH
I L(pk) = 75 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JC
R q JA
T L
844
0.7
62.5
260
mJ
° C/W
° C
1
2
3
75N06
A
Y
WW
CASE 418B AYWW
STYLE 2
2
Drain
= Device Code
= Assembly Location
= Year
= Work Week
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 3
1
Publication Order Number:
NTP75N06/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTP90N02G | MOSFET N-CH 24V 90A TO220AB |
| NTQD6866R2G | MOSFET 2N-CH 20V 4.7A 8TSSOP |
| NTQD6968N | MOSFET 2N-CH 20V 6.2A 8TSSOP |
| NTQS6463R2 | MOSFET P-CH 20V 6.8A 8-TSSOP |
| NTR0202PLT1 | MOSFET P-CH 20V 400MA SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP75N06/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 75 Amps， 60 Volts |
| NTP75N06D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTP75N06G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET N |
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。