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| 型号： | NTP75N06 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 75A TO220AB |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4510pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP75N06OS |
NTP75N06, NTB75N06, NTBV75N06
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 1)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
71
73
?
?
?
?
?
10
100
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 1)
(V GS = 10 Vdc, I D = 37.5 Adc)
Static Drain ? to ? Source On ? Voltage (Note 1)
(V GS = 10 Vdc, I D = 75 Adc)
(V GS = 10 Vdc, I D = 37.5 Adc, T J = 150 ° C)
Forward Transconductance (Note 1) (V DS = 15 Vdc, I D = 37.5 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
?
2.8
8.0
8.2
0.72
0.63
40.2
4.0
?
9.5
0.86
?
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
3220
1020
234
4510
1430
330
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
16
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 75 Adc,
V GS = 10 Vdc, R G = 9.1 W ) (Note 1)
t r
t d(off)
t f
?
?
?
112
90
100
155
125
140
Gate Charge
(V DS = 48 Vdc, I D = 75 Adc,
V GS = 10 Vdc) (Note 1)
Q T
Q 1
Q 2
?
?
?
92
14
44
130
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 75 Adc, V GS = 0 Vdc) (Note 1)
(I S = 75 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 75 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 1)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.0
0.9
77
49
28
0.16
1.1
?
?
?
?
?
Vdc
ns
m C
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP75N06/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 75 Amps， 60 Volts |
| NTP75N06D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTP75N06G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET N |
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
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