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参数资料
| 型号： | NTUD3127CT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SOT-963 |
| 产品变化通告： | Product Discontinuation 14/Jun/2012 |
| 标准包装： | 8,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 160mA，140mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 9pF @ 15V |
| 功率 - 最大： | 125mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-963 |
| 供应商设备封装： | SOT-963 |
| 包装： | 带卷 (TR) |
NTUD3127C
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State, Minimum Pad (Note 3)
Junction ? to ? Ambient – t v 5 s (Note 3)
Symbol
R q JA
Max
1000
600
Unit
° C/W
3. Surface ? mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
I DSS
N
P
N
P
N
P
V GS = 0 V
V GS = 0 V, V DS = 5.0 V
V GS = 0 V, V DS = ? 5.0 V
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
I D = 250 m A
I D = ? 250 m A
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
20
? 20
50
200
? 50
? 200
100
? 100
V
nA
nA
Gate ? to ? Source Leakage Current
I GSS
N
P
V DS = 0 V, V GS = ± 5.0 V
100
? 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.4
? 0.4
1.0
? 1.0
V
Drain ? to ? Source On Resistance
N
P
N
P
V GS = 4.5 V, I D = 100 mA
V GS = ? 4.5V, I D = ? 100 mA
V GS = 2.5 V, I D = 50 mA
V GS = ? 2.5V, I D = ? 50 mA
1.5
4.0
2.0
5.0
3.0
5.0
4.0
7.0
R DS(on)
N
P
N
P
V GS = 1.8 V, I D = 20 mA
V GS = ? 1.8V, I D = ? 20 mA
V GS = 1.5 V, I D = 10 mA
V GS = ? 1.5 V, I D = ? 10 mA
3.0
6.5
4.0
7.5
6.0
10
10
14
W
N
P
V GS = 1.2 V, I D = 1.0 mA
V GS = ? 1.2 V, I D = ? 1.0 mA
5.5
11.5
Forward Transconductance
g FS
N
P
V DS = 5.0 V, I D = 125 mA
V DS = ? 5.0 V, I D = ? 125 mA
0.35
0.26
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
9.0
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
C ISS
C OSS
C RSS
N
P
f = 1 MHz, V GS = 0 V
V DS = 15 V
f = 1 MHz, V GS = 0 V
V DS = ? 15 V
3.0
2.2
12
2.7
1.0
pF
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
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相关PDF资料 |
PDF描述 |
|---|---|
| NTUD3128NT5G | MOSFET N-CH DUAL 20V SOT-963 |
| NTUD3129PT5G | MOSFET P-CH DUAL 20V SOT-963 |
| NTUD3169CZT5G | MOSFET N/P-CH 20V SOT-963 |
| NTUD3170NZT5G | MOSFET N-CH DUAL 20V SOT-963 |
| NTUD3171PZT5G | MOSFET P-CH DUAL 20V SOT-963 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTUD3128N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package |
| NTUD3128NT5G | 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3129P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package |
| NTUD3129PT5G | 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3169CZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package |
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