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参数资料
| 型号： | NX25P16-VSI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 16M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.208 INCH, SOIC-8 |
| 文件页数： | 17/43页 |
| 文件大小： | 918K |
| 代理商： | NX25P16-VSI |
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W25P80 / W25P16 / W25P32
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When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 13, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle.
Figure 14. Release Power-down Instruction Sequence
Figure 15. Release Power-down / Device ID Instruction Sequence Diagram
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