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参数资料
| 型号： | NX25P16-VSI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 16M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.208 INCH, SOIC-8 |
| 文件页数： | 6/43页 |
| 文件大小： | 918K |
| 代理商： | NX25P16-VSI |
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W25P80 / W25P16 / W25P32
- 14 -
9.2.2
Instruction Set (1)
INSTRUCTION
NAME
BYTE 1
CODE
BYTE 2 (5)
BYTE 3
BYTE 4
BYTE 5
BYTE 6
N-BYTES
Write Enable
06h
Write Disable
04h
Read Status
Register
05h
(S7–S0)
(1)
(2)
Write Status
Register
01h
S7–S0
Read Data
03h
A23–A16
A15–A8
A7–A0
(D7–D0)
(Next byte)
continuous
Fast Read
0Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0)
(Next Byte)
continuous
Page Program
02h
A23–A16
A15–A8
A7–A0
(3)
(D7–D0)
(Next byte)
Up to 256
bytes
(128 Words)
(3)
Sector Erase
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
C7h
Power-down
B9h
Read Parameter
Page
53h
Don’t care
A7–A0
D7-D0
Next Byte
Fast Read
Parameter Page
5Bh
Don’t care
A7–A0
dummy
D7-D0
Next Byte
Program
Parameter Page
52h
Don’t care
A7–A0
(3)
D7-D0
D15-D8
Up to 256
bytes
(128 Words)
Erase Parameter
Page
D5h
Release Power-
down / Device ID
(4)
ABh
dummy
(ID7-ID0)
(5)
Manufacturer/
Device ID
(4)
90h
dummy
00h
(M7-M0)
(ID7-ID0)
JEDEC ID
9Fh
(M7-M0)
Manufacturer
(ID15-ID8)
Memory
Type
(ID7-ID0)
Capacity
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until //CS terminates the instruction.
3. The Page Program instruction programs in increments of one word (two bytes) at a time. The Program
address A23-A16 must be an “Even” Address (A0 must equal 0).
4. See Manufacturer and Device Identification table for Device ID information
5. The Device ID will repeat continuously until //CS terminates the instruction.
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