参数资料
型号: PC929J00000F
厂商: Sharp Microelectronics
文件页数: 14/22页
文件大小: 0K
描述: PHOTOCOUPLER OPIC 14-SMD
产品目录绘图: PC92(8,9)J Circuit
标准包装: 50
系列: OPIC™
电压 - 隔离: 4000Vrms
通道数: 1,单向
电流 - 输出 / 通道: 100mA
传输延迟高 - 低 @ 如果: 300ns @ 5mA
电流 - DC 正向(If): 20mA
输入类型: DC
输出类型: 推挽式/图腾柱
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.256",6.50mm 宽)
供应商设备封装: 14-SMT
包装: 管件
产品目录页面: 2770 (CN2011-ZH PDF)
其它名称: 425-2210-5
PC929J00000F Series
Fig.39 Overcurrent Detecting Voltage - Supply Voltage Characteristics Test Circuit
Anode
V CC
I F
Cathode
O 1
O 2
C
V
R G
R C
V O2
V CC
FS
C P
C G
V
V C
GND
Fig.40 Example of The Application Circuit (IGBT Drive for Inverter)
Anode
V CC
Cathode
O 1
O 2
C B
R 1
R G
+
V CC1 = 12V
( + )
Cathode
R C
TTL, micro computer,
C
R 2
D 1
etc.
F S
D 2
R 3
C p
+
V CC2 = 12V
GND
( ? )
To micro computer
R FS
PC817X etc.
C FS
? In order to stabilize the power supply line, we recommend to locate a bypass capacitor C B (0.01 μ F or more)
between V CC and GND near photocoupler.
? In order to stabilize the detecting voltage of pin-C, we recommend to locate a capacitor C P (approximately
1 000pF) between pin-C and GND, and a resistor R C (approximately 1.0k ? ) between V CC and pin-C.
However, the rise time of the detection voltage at Pin-C varies along with the time constants of C P and R C .
So, please make sure the device works properly in actual conditions.
? For the diode D, which is located between pin-C and collector of IGBT, we recommend to use a diode that
has the withstand voltage characteristic equivalent to IGBT and also has little leak current.
? In order to prevent the failure mode or breakdown of pin-C from V CE variation of IGBT, we recommend to
locate a resistor R 2 (approximately 10k ? ) and a diode D1 at near pin-C, and a resistor R 3 (approximately
50k ? ) and a diode D 2 at between pin-C and GND.
This application circuit shows the general example of a circuit, and is not a design guarantee
for right operation.
Sheet No.: D2-A06302EN
14
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