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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 1/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
1 of 11
Rev. 05, 2011-05-17
Wideband RF LDMOS Integrated Power Amplier
15 W, 700 – 1000 MHz
Description
The PTMA080152M is a wideband, on-chip matched, 15-watt,
2-stage LDMOS integrated power amplier intended for wideband
driver applications in the 700 to 1000 MHz frequency range. It is of-
fered in a 20-lead thermally-enhanced overmolded package for cool
and reliable operation.
PTMA080152M
Package PG-DSO-20-63
RF Characteristics
GSM/EDGE Measurements (not subject to production test—veried by design/characterization in Inneon test xture)
VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, = 920 to 960 MHz, POUT = 8 W Avg.
Characteristic
Symbol
Min
Typ
Max
Unit
Input Return Loss
IRL
—
–15
—
dB
Gain
Gps
—
30
—
dB
Power Added Efficiency
η
—
34
—
%
Error Vector Magnitude
EVM (RMS)
—
1.5
—
%
table continued next page
Features
Broadband on-chip matching, 50-ohm input and
~10-ohm output
Typical GSM/EDGE performance at 28 V, 920 to
960 MHz
- Gain = 30 dB
- Efciency = 34% at 8 W output power
- EVM @ 8 W = 1.5%
- ACPR @ 400 kHz = –61 dBc
- ACPR @ 600 kHz = –75 dBc
Typical CW performance, 940 MHz, 28 V
- Output power at P–1dB = 20 W
- Efciency = 49%
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 20 W
(CW) output power
RoHS-compliant package
40
-35
-30
-25
-20
-15
-10
20
25
30
35
40
45
50
D
3
(
d
B
c
)
e
d
Effic
ie
n
cy
(%)
Two-tone Drive-up
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA
= 920, 940, 960 MHz
Efficiency
IMD3
920 MHz
940 MHz
960 MHz
-60
-55
-50
-45
-40
0
5
10
15
20
27
29
31
33
35
37
39
41
43
IM
D
Pow
e
rAdd
e
Average Output Power ( dBm )
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| PTMA080152M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| PTMA080152M_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz |
| PTMA080152MV1AUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 20-Pin DSO EP T/R 制造商:Infineon Technologies AG 功能描述:RFP-LD IC - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IC AMP RF LDMOS 15W DSO-20 |
| PTMA080302M | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz |
| PTMA080302M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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