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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 4/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
2 of 11
Rev. 05, 2011-05-17
RF Characteristics (cont.)
GSM/EDGE Measurements (cont.)
VDS = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, = 920 to 960 MHz, POUT = 8 W Avg.
Characteristic
Symbol
Min
Typ
Max
Unit
Modulation Spectrum
400 kHz offset
ACPR1
—
–61
—
dBc
600 kHz offset
ACPR2
—
–75
—
dBc
Spurs Load 3:1
—
–60
dBc
Gain Flatness
ΔG
—
0.2
—
dB
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA, POUT = 8 W PEP, = 940 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
29
30
—
dB
Power Added Efficiency
η
33
35
—
%
Intermodulation Distortion
IMD3
—
–34
–31
dBc
DC Characteristics
Stage 1 Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
1.0
A
VDS = 63 V, VGS = 0 V
IDSS
—
10.0
A
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
1.0
A
On-state Resistance
Stage 1
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
3.48
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ1 = 70 mA,
VGS
2.0
2.5
3.0
V
Stage 2 Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
1.0
A
VDS = 63 V, VGS = 0 V
IDSS
—
10.0
A
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
1.0
A
On-state Resistance
Stage 2
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.6
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ2 = 90 mA
VGS
2.0
—
3.0
V
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