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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 7/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
5 of 11
Rev. 05, 2011-05-17
75
-70
-65
-60
-55
-50
-45
-40
-35
10
15
20
25
30
35
40
45
50
d
ulation
Spectrum
(dBc)
e
rAdded
Effic
ienc
y
(%
)
EDGE Modulation Spectrum Performance
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA,
series are at selected frequencies
Efficiency
400 kHz
925.2 MHz
942.6 MHz
959.8 MHz
-85
-80
-75
0
5
10
30 31 32 33 34 35 36 37 38 39 40 41 42
Mo
d
Pow
e
Output Power (dBm)
600 kHz
Typical Performance (cont.)
EDGE Modulation Spectrum Performance
V
DD = 28 V
I
DQ1 = 70 mA IDQ2 = 120 mA
-35
50
V
DD
28 V, I
DQ1
70 mA, I
DQ2
120 mA,
series show = 942.6 MHz, at selected temperatures
-50
-45
-40
35
40
45
m
(d
Bc)
e
nc
y
(
%
)
Efficiency
90 °C
–25 °C
-65
-60
-55
20
25
30
o
n
Spectru
d
ed
Ef
fi
ci
e
-80
-75
-70
5
10
15
Modulat
io
P
ow
er
Ad
d
400 kHz
600 kH
-85
0
30 31 32 33 34 35 36 37 38 39 40 41 42
P
Output Power (dBm)
600 kHz
Gate – Source Voltage vs. Temperature
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA
1.15
tage
VGS1
1.05
1.10
o
urce
Vol
t
V
VGS1
VGS2
1.00
G
ate
–
S
o
h
reshold),
Slope = –1.3 mV/°C
0.90
0.95
m
alized
G
(t
h
0.85
-30
-10
10
30
50
70
90
Nor
m
Tt
(°C)
Temperature (°C)
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相关代理商/技术参数 |
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|---|---|
| PTMA080152M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| PTMA080152M_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz |
| PTMA080152MV1AUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 20-Pin DSO EP T/R 制造商:Infineon Technologies AG 功能描述:RFP-LD IC - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IC AMP RF LDMOS 15W DSO-20 |
| PTMA080302M | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz |
| PTMA080302M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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