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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 9/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
7 of 11
Rev. 05, 2011-05-17
Reference Circuit
Reference circuit schematic for = 940 MHz
Circuit Assembly Information
DUT
PTMA080152M, LDMOS IC
PCB
0.76 mm [.030"] thick,
ε
r = 4.5, Rogers RO4350, 2 oz. copper
Microstrip
Electrical Characteristics at 940 MHz1
L x W (mm)
L x W (in.)
1
0.017
λ, 50.0 Ω
3.00 x 1.70
0.118 x 0.067
2
0.143
λ, 50.0 Ω
24.71 x 1.70
0.973 x 0.067
3
0.024
λ, 15.0 Ω
4.09 x 8.64
0.161 x 0.340
4
0.144
λ, 59.0 Ω
24.77 x 1.30
0.975 x 0.051
5
0.024
λ, 27.0 Ω
4.22 x 4.11
0.166 x 0.162
6
0.044
λ, 34.0 Ω
7.57 x 3.02
0.298 x 0.119
7
0.044
λ, 44.0 Ω
8.33 x 2.11
0.328 x 0.083
8
0.0702
λ, 44.0 Ω
12.12 x 2.11
0.477 x 0.083
9
0.030
λ, 44.0 Ω
5.18 x 2.11
0.204 x 0.083
1Electrical characteristics are rounded.
C18
10μF
C16
0.1μF
C15
47 pF
C17
1μF
C19
100μF
50V
VD2
3
5
4
C22
33pF
C20
2.2pF
6
7
C21
5.6pF
8
9
J2
PTMA080152M
516
10
9
7
8
6
11
12
13
14
15
DUT
1
3
4
2
17
18
19
20
C14
47pF
C10
47pF
C12
1μF
C8
1μF
J1
C7
10μF
C11
10μF
C9
0.1μF
C13
0.1μF
1
VD1
C1
100μF
50V
C2
10μF
C3
1μF
C6
1pF
2
C4
0.1μF
C5
47pF
R1
0O
Q1
VG1
R3
R2
0O
Q2
R4
G2
V
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相关代理商/技术参数 |
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|---|---|
| PTMA080152M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| PTMA080152M_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz |
| PTMA080152MV1AUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 20-Pin DSO EP T/R 制造商:Infineon Technologies AG 功能描述:RFP-LD IC - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IC AMP RF LDMOS 15W DSO-20 |
| PTMA080302M | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz |
| PTMA080302M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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