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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 6/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
4 of 11
Rev. 05, 2011-05-17
Typical Performance (data taken in Infineon production test fixture)
-20
-16
-12
-8
-4
0
12
16
20
24
28
32
turn
Loss
(dB
)
Ga
in
(
d
B
)
Broadband Performance
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA
Fixture Tuned For 920 - 960 MHz
Gain
Return Loss
-32
-28
-24
0
4
8
750
800
850
900
950
1000 1050 1100 1150
Re
t
Frequency (MHz)
CW Performance
V
=28 V I
=70 mA I
=90 mA
60
65
30
32
V
DD =28 V, IDQ1 =70 mA, IDQ2 =90 mA
= 920 , 940, 960 MHz
40
45
50
55
60
22
24
26
28
30
E
ff
iciency
(%)
(dB)
Gain
920 MHz
20
25
30
35
14
16
18
20
ow
er
Added
E
Ga
in
(
920 MHz
940 MHz
960 MHz
Efficiency
10
15
10
12
29
31
33
35
37
39
41
43
45
P
Output Power (dBm)
3
4
5
6
7
8
9
10
15
20
25
30
35
40
45
50
V
e
c
to
rM
a
g
n
it
u
d
e
(%
)
d
ded
Ef
ficie
n
cy
(%
)
EDGE - EVM
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA,
series show = 942.6 MHz, at selected temperatures
Efficiency
90 °C
–25 °C
25 °C
0
1
2
3
0
5
10
15
30 31 32 33 34 35 36 37 38 39 40 41 42
Er
ro
r
V
Pow
e
rA
Output Power (dBm)
EVM
EDGE - EVM
V
DD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA,
series are at selected frequencies
9
10
45
50
%
)
%
)
Efficiency
925.2 MHz
6
7
8
30
35
40
gnit
ude
(
%
fficie
n
cy
(
%
Efficiency
942.6 MHz
959.8 MHz
2
3
4
5
10
15
20
25
Vector
Ma
rAdded
E
f
EVM
0
1
2
0
5
10
30 31 32 33 34 35 36 37 38 39 40 41 42
Erro
r
Pow
e
EVM
30 31 32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PTMA080152M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| PTMA080152M_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz |
| PTMA080152MV1AUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 20-Pin DSO EP T/R 制造商:Infineon Technologies AG 功能描述:RFP-LD IC - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IC AMP RF LDMOS 15W DSO-20 |
| PTMA080302M | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz |
| PTMA080302M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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