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参数资料
| 型号： | PTMA080152M |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | GREEN, PLASTIC PACKAGE-20 |
| 文件页数： | 8/11页 |
| 文件大小： | 237K |
| 代理商： | PTMA080152M |
PTMA080152M
Confidential, Limited Internal Distribution
Data Sheet
6 of 11
Rev. 05, 2011-05-17
0.
1
0.
3
0.
2
0.
4
0
.
1
0.1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.0
700 MHz
1000 MHz
Z Load
Z0 = 50 Ω
Frequency
Z Load
Ω
MHz
R
jX
700
10.6
–4.3
720
10.1
–3.7
740
9.8
–3.1
760
9.5
–2.4
780
9.2
–1.8
800
9.0
–1.2
820
8.8
–0.5
840
8.7
0.1
860
8.6
0.8
880
8.5
1.4
900
8.5
2.1
920
8.5
2.8
940
8.5
3.5
960
8.6
4.3
980
8.7
5.0
1000
8.8
5.8
Broadband Circuit Impedance
See next page for reference circuit information
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PTMA080152M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| PTMA080152M_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz |
| PTMA080152MV1AUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET N-CH 65V 20-Pin DSO EP T/R 制造商:Infineon Technologies AG 功能描述:RFP-LD IC - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IC AMP RF LDMOS 15W DSO-20 |
| PTMA080302M | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz |
| PTMA080302M V1 | 功能描述:射频MOSFET电源晶体管 RFP-LD 8 IC RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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