参数资料
型号: QS5U34TR
厂商: Rohm Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 20V 1.5A TSMT5
产品目录绘图: QS5x Series TSMT-5
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 180 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 1.3V @ 1mA
闸电荷(Qg) @ Vgs: 2.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 110pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: SOT-23-5 细型,TSOT-23-5
供应商设备封装: TSMT5
包装: 标准包装
产品目录页面: 1638 (CN2011-ZH PDF)
其它名称: QS5U34DKR
QS5U34
Transistors
1000
100
100
10
Ta=125 C
75 C
25 C
? 25 C
10
1
0.1
125 ° C
75 ° C
25 ° C
0.01
1
0.1
0.001
0.0001
? 25 ° C
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
Forward Voltage : V F [ V ]
Fig.10 Forward Temperature Characteristics
Reverse Voltage : V R [ V ]
Fig.11 Reverse Temperature Characteristics
Notice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/4
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QS5U36 制造商:ROHM 制造商全称:Rohm 功能描述:1.5V Drive Nch+SBD MOSFET
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QS5V9912JRC 制造商:QUALITY SEMI 功能描述:
QS5V991-7JR1 制造商:QSI 功能描述:
QS5V99320QC 制造商:QUALITY 功能描述:QS5V993-2QC