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参数资料
| 型号： | QS6U24TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1A TSMT6 |
| 产品目录绘图： | TSMT-6 Package Top |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 1.7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 90pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSMT6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1639 (CN2011-ZH PDF) |
| 其它名称： | QS6U24DKR |
QS6U24
Transistor
4V Drive Pch+SBD MOS FET
QS6U24
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
External dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
1.0MAX
0.85
0.7
Features
(6)
(5)
(4)
1) The QS6U24 combines Pch MOS FET with a
Schottky barrier diode in a TSMT6 package.
2) Low on-state resisternce with a fast switching.
1pin mark
(1)
(2)
0.4
(3)
0.16
0~0.1
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.
Applications
Inner circuit
Each lead has same dimensions
Abbreviated symbol : U24
Load switch, DC/DC conversion
(6)
(5)
(4)
Packaging specifications
Package
Taping
? 2
Type
Code
Basic ordering unit (pieces)
TR
3000
QS6U24
? 1
(1)Anode
(2)Source
(3)Gate
(1)
(2)
(3)
(4)Drain
Absolute maximum ratings (Ta=25 ° C)
< MOSFET >
(5)N/C
? 1 ESD protection diode (6)Cathode
? 2 Body diode
? A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 30
± 20
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
Tch
P D
? 1
? 1
? 3
± 1.0
± 2.0
? 0.3
? 1.2
150
0.9
A
A
A
A
° C
W/ELEMENT
< Di >
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Symbol
V RM
V R
I F
I FSM ? 2
Tj
Limits
25
20
0.7
3.0
150
Unit
V
V
A
A
° C
Power dissipation
P D
? 3
0.7
W/ELEMENT
< MOSFET AND Di >
Parameter
Symbol
Limits
Unit
Total power dissipatino
Range of strage temperature
P D
Tstg
? 3
1.25
? 55 to + 150
W/TOTAL
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1% ? 2 60Hz ? 1cyc. ? 3 Mounted on a ceramic board
Rev.B
1/4
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