- 您现在的位置：买卖IC网 > Datasheet目录502 > QSB363GR (Fairchild Optoelectronics Group)PHOTOTRANS IR 940NM GW TOPLOOKER Datasheet资料下载
参数资料
| 型号： | QSB363GR |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRANS IR 940NM GW TOPLOOKER |
| 标准包装： | 1 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 2mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 940nm |
| 视角： | 24° |
| 功率 - 最大： | 75mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 2-SMD，鸥翼型 |
| 其它名称： | QSB363GRDKR |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise specified.
Soldering Temperature (Iron)
Symbol
T OPR
T STG
T SOL-I
T SOL-F
V CEO
V ECO
Parameter
Operating Temperature
Storage Temperature
(1,2)
Soldering Temperature (Flow) (1,2)
Collector Emitter Voltage
Emitter Collector Voltage
Min.
-40 to +85
-40 to +85
260
260
30
5
Unit
°C
V
P C
Power Dissipation
(3)
75
mW
Notes:
1. RMA flux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Derate power dissipation linearly 1.08 mW/°C above 25°C.
Electrical / Optical Characteristics
Values are at T A = 25°C unless specified otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
λ P
Θ
Peak Sensitivity Wavelength
Reception Angle
940
±12
nm
o
I CEO
BV CEO
BV ECO
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
V CE = 20 V,
E e = 0 mW/cm 2
I C = 100 μ A,
E e = 0 mW/cm 2
I E = 100 μ A,
E e = 0 mW/cm 2
30
5
100
nA
V
V
I C(ON)
V CE(SAT)
t r
t f
On-State Collector Current
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
V CE = 5 V,
E e = 1 mW/cm 2 ,
λ = 940 nm GaAs
I C = 2 mA,
E e = 1 mW/cm 2 ,
λ = 940 nm GaAs
V CE = 5 V, I C = 1 mA,
R L = 1000 Ω
1.0
1.5
15
15
0.4
mA
V
μ s
μ s
? 2005 Fairchild Semiconductor Corporation
QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| QSC112CC6R0 | PHOTOTRANSISTOR IR 880NM 3MM |
| QSC113C6R0 | PHOTOTRANSISTOR IR 880NM 3MM |
| QSD2030FA4R0 | PHOTODIODE DAYL FILTER 880NM 5MM |
| QSD2030 | PHOTODIODE 880NM CLEAR 5MM |
| QSE1103 | PHOTOSENSOR HS LOGIC SIDELOOKER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QSB363YR | 功能描述:光电晶体管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| QSB363ZR | 功能描述:光电晶体管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| QSB373ZR | 功能描述:光电晶体管 T-3- 4 PHOTO XSTR DETECTOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| QSB-40-01 | 功能描述:风扇电线及配件 40mm EMI FILTR SHLD RoHS:否 制造商:ebm-papst 类型:Finger Guard 适合风扇大小:120 mm 系列: |
| QSB-40-01 | 制造商:Qualtek Electronics Corporation 功能描述:EMI FILTER SHIELD |
发布紧急采购，3分钟左右您将得到回复。