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参数资料
| 型号： | RFD14N05SM9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 14A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | RFD14N05SM9ADKR |
RFD14N05SM 9A
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
RFD14N05SM 9A
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J, T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
50
50
± 20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
V
V
V
A
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SYMBOL
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
TEST CONDITIONS
I D = 250 μ A, V GS = 0V (Figure 9)
V GS = V DS , I D = 250 μ A
V DS = Rated BV DSS , V GS = 0V
V DS = 0.8 x Rated BV DSS , V GS = 0V, T C = 150 o C
V GS = ±2 0V
I D = 14A, V GS = 10V, (Figure 11)
V DD = 25V, I D ≈ 14A, V GS = 10V,
R GS = 25 ?, R L = 1.7 ?
(Figure 13)
MIN
50
2
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
14
26
45
17
-
MAX
-
4
25
250
± 100
0.100
60
-
-
-
-
100
UNITS
V
V
μ A
μ A
nA
?
ns
ns
ns
ns
ns
ns
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Q g(TOT)
Q g(10)
Q g(TH)
V GS = 0V to 20V
V GS = 0V to 10V
V GS = 0V to 2V
V DD = 40V, I D = 14A,
R L = 2.86 ?
I g(REF) = 0.4mA
(Figure 13)
-
-
-
-
-
-
40
25
1.5
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C ISS
C OSS
C RSS
R θ JC
R θ JA
V DS = 25V, V GS = 0V, f = 1MHz
(Figure 12)
-
-
-
-
-
570
185
50
-
-
-
-
-
3.125
100
pF
pF
pF
o C/W
o C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
SYMBOL
V SD
t rr
TEST CONDITIONS
I SD = 14A
I SD = 14A, dI SD /dt = 100A/ μ s
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
?2004 Fairchild Semiconductor Corporation
RFD14N05SM 9A Rev. C1
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相关代理商/技术参数 |
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|---|---|
| RFD14N05SM9A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 50V, 14mA |
| RFD14N05SM9A_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05SM9AR3979 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD14N05SM9AS2385 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD14N05SMX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 50V 14A DPAK |
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