参数资料
型号: RFD14N05SM9A
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 50V 14A DPAK
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 14A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 14A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 40nC @ 20V
输入电容 (Ciss) @ Vds: 570pF @ 25V
功率 - 最大: 48W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1605 (CN2011-ZH PDF)
其它名称: RFD14N05SM9ADKR
RFD14N05SM9A
Typical Performance Curves
1.2
Unless Otherwise Specified
16
1.0
12
0.8
0.6
8
0.4
4
0.2
0
0
25
50 75 100 125
T C , CASE TEMPERATURE ( o C)
150
175
0
25
50
75 100 125
T C , CASE TEMPERATURE ( o C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0.5
0.2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.1
0.1
0.05
P DM
0.02
0.01
NOTES:
t 1
t 2
SINGLE PULSE
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JA x R θ JA + T A
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
T J = MAX RATED
SINGLE PULSE
T C = 25 o C
V GS = 20V
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25 ? --------------------- ?
? ?
100 μ s
100
V GS = 10V
? 175 – TC ?
150
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
TRANSCONDUCTANCE
MAY LIMIT CURRENT
10ms
IN THIS REGION
1
1
10
DC
100ms
100
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
?2004 Fairchild Semiconductor Corporation
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD14N05SM 9A Rev. C1
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