参数资料
型号: RJK6025DPD-00#J2
厂商: Renesas Electronics America
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N CH 600V 1A MP3A
标准包装: 1
系列: *
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 1A
开态Rds(最大)@ Id, Vgs @ 25° C: *
Id 时的 Vgs(th)(最大): 5V @ 1mA
闸电荷(Qg) @ Vgs: 5nC @ 10V
输入电容 (Ciss) @ Vds: 37.5pF @ 25V
功率 - 最大: 29.7W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: MP-3A
包装: 标准包装
其它名称: RJK6025DPD-00#J2DKR
RJK6025DPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
Symbol
V (BR)DSS
I DSS
I GSS
V GS(off)
R DS(on)
Min
600
3
Typ
13.5
Max
1
±0.1
5
17.5
Unit
V
? A
? A
V
?
Test conditions
I D = 10 mA, V GS = 0
V DS = 600 V, V GS = 0
V GS = ? 30 V, V DS = 0
V DS = 10 V, I D = 1 mA
I D = 0.5 A, V GS = 10 V Note3
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Ciss
Coss
Crss
t d(on)
t r
t d(off)
t f
Qg
Qgs
Qgd
V DF
t rr
37.5
7.5
0.9
30
14.5
48
77
5.0
0.7
3.3
0.85
230
1.45
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V DS = 25 V
V GS = 0
f = 1 MHz
I D = 0.2 A
V GS = 10 V
R L = 1500 ?
Rg = 10 ?
V DD = 480 V
V GS = 10 V
I D = 1.0 A
I F = 1.0 A, V GS = 0 Note3
I F = 0.4 A, V GS = 0
di F /dt = 100 A/ ? s
Notes: 3. Pulse test
4. Since this device is equipped with high voltage FET chip (V DSS ?? 600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
5. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
Page 2 of 6
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