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参数资料
| 型号： | RQ1A060ZPTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 6A TSMT8 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 6V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TSMT8 |
| 供应商设备封装： | TSMT8 |
| 包装： | 带卷 (TR) |
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R1120A
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