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参数资料
| 型号： | RT1A050ZPTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 5A TSST8 |
| 产品目录绘图： | MOSFET TSST-8 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 6V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSST |
| 供应商设备封装： | TSST8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1639 (CN2011-ZH PDF) |
| 其它名称： | RT1A050ZPDKR |
RT1A050ZP
Electrical characteristic curves
Data Sheet
5
4
3
2
1
Ta=25°C
Pulsed
V GS = -10V
V GS = -4.5V
V GS = -2.5V
V GS = -1.8V
V GS = -1.5V
V GS = -1.2V
10
9
8
7
6
5
4
3
2
1
Ta=25°C
Pulsed
V GS = -10V
V GS = -1.8V
V GS = -1.5V
V GS = -1.2V
10
1
0.1
0.01
V DS = -6V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0
0
0.001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
0.5
1
1.5
2
1000
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.1 Typical Output Characteristics( Ⅰ )
1000
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.2 Typical Output Characteristics( Ⅱ )
1000
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.3 Typical Transfer Characteristics
100
Ta=25°C
Pulsed
V GS = -1.5V
V GS = -1.8V
V GS = -2.5V
V GS = -4.5V
100
V GS = -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
V GS = -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
10
1
10
1
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : -I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : -I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
1000
V GS = -1.8V
Ta=125°C
1000
V GS = -1.5V
100
V DS = -6V
Pulsed
Ta=75°C
Ta=25°C
Pulsed
Ta=125°C
Pulsed
100
Ta= -25°C
100
Ta=75°C
Ta=25°C
Ta= -25°C
10
Ta= -25°C
10
1
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
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c 2009 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : -I D [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
3/5
DRAIN-CURRENT : -I D [A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.01 - Rev.A
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