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参数资料
| 型号： | RT1A050ZPTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 5A TSST8 |
| 产品目录绘图： | MOSFET TSST-8 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 6V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSST |
| 供应商设备封装： | TSST8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1639 (CN2011-ZH PDF) |
| 其它名称： | RT1A050ZPDKR |
Appendix
Notes
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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
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sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
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sponsibility whatsoever for any dispute arising from the use of such technical information.
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Appendix-Rev4.0
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