参数资料
型号: RUR020N02TL
厂商: Rohm Semiconductor
文件页数: 4/12页
文件大小: 0K
描述: MOSFET N-CH 20V 2A TSMT3
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: SC-96
供应商设备封装: TSMT3
包装: 带卷 (TR)
其它名称: RUR020N02TL-ND
RUR020N02TLTR
RUR020N02
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
Data Sheet
Fig.2 Maximum Safe Operating Area
10
100
P W = 10ms
P W = 1ms P W = 100 m s
80
60
1
Operation in this area
is limited by R DS (on)
(V GS = 4.5V )
40
20
0.1
DC Operation
T a =25oC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0
0
50
100
150
200
0.01
0.1
1
10
100
Junction Temperature : Tj [ ° C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Drain - Source Voltage : V DS [V]
Fig.4 Single Pulse Maxmum Power dissipation
10
1
0.1
T a =25oC
Single Pulse
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
1000
100
10
T a =25oC
Single Pulse
0.01
0.001
0.0001
Rth(ch-a)=125oC/W
Rth(ch-a)(t)=r(t) × Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01 1 100
1
0.1
0.0001
0.01
1
100
Pulse Width : P W [s]
Pulse Width : P W [s]
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
4/11
2012.06 - Rev.B
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