参数资料
型号: RUR020N02TL
厂商: Rohm Semiconductor
文件页数: 7/12页
文件大小: 0K
描述: MOSFET N-CH 20V 2A TSMT3
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: SC-96
供应商设备封装: TSMT3
包装: 带卷 (TR)
其它名称: RUR020N02TL-ND
RUR020N02TLTR
RUR020N02
l Electrical characteristic curves
Fig.11 Drain CurrentDerating Curve
1.2
Data Sheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
300
1
0.8
0.6
0.4
0.2
250
200
150
100
50
I D = 2.0 A
I D = 1.0 A
T a = 25oC
Pulsed
0
-25
0
25
50
75
100
125
150
0
0
2
4
6
8
10
Junction Temperature : T j [oC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
1000
Gate - Source Voltage : V GS [V]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
150
T a = 25oC
Pulsed
V GS = 1.5V
V GS = 1.8V
V GS = 2.5V
V GS = 4.5V
100
100
.
50
V GS =4.5V
I D =2.0A
pulsed
10
0.01
0.1
1
10
0
-50 -25
0
25
50
75
100 125 150
Drain Current : I D [A]
Junction Temperature : T j [oC]
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7/11
2012.06 - Rev.B
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