参数资料
型号: RUR020N02TL
厂商: Rohm Semiconductor
文件页数: 6/12页
文件大小: 0K
描述: MOSFET N-CH 20V 2A TSMT3
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: SC-96
供应商设备封装: TSMT3
包装: 带卷 (TR)
其它名称: RUR020N02TL-ND
RUR020N02TLTR
T a = 125oC
RUR020N02
l Electrical characteristic curves
Fig.7 Breakdown Voltage
vs. Junction Temperature
60
V GS =0V
I D =1mA
pulsed
40
Data Sheet
Fig.8 Typical Transfer Characteristics
10
V DS = 10V
Pulsed
1
T a = 75oC
T a = 25oC
T a = - 25oC
0.1
20
0.01
0
-50
0
50
100
150
0.001
0
0.5
1
1.5
2
Junction Temperature : T j [ ° C ]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
1
V DS =10V
I D =1mA
0.8 pulsed
Gate - Source Voltage : V GS [V]
Fig.10 Transconductance vs. Drain Current
10
V DS = 10V
Pulsed
0.6
1
0.4
0.2
T a = - 25oC
T a =25oC
T a =75oC
T a =125oC
0
-50
0
50
100
150
0.1
0.01
0.1
1
10
Junction Temperature : T j [ ° C ]
Drain Current : I D [A]
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? 2012 ROHM Co., Ltd. All rights reserved.
6/11
2012.06 - Rev.B
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