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参数资料
| 型号： | S29CL032J0JFAM020 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件页数： | 73/79页 |
| 文件大小： | 2994K |
| 代理商： | S29CL032J0JFAM020 |
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March 30, 2009 S29CD-J_CL-J_00_B3
S29CD-J & S29CL-J Flash Family
75
Data
She e t
21. Revision History
Section
Description
Revision A0 (March 1, 2005)
Initial release.
Revision A1 (April 15, 2005)
Ordering Information and Valid
Combinations tables
Updated to include lead Pb-free options.
Revision A2 (January 20, 2006)
Ordering Information
Added “Contact factory” for 75 MHz. Modified Ordering Options for Characters 15 & 16 to reflect
autoselect ID & top/bottom boot. Changed “N” for Extended Temperature Range to “M”.
Input/Output Descriptions
Removed Logic Symbol Diagrams.
Additional Resources
Added section.
Memory Address Map
Changed “Bank 2” to “Bank 1”.
Simultaneous Read/Write Operation
Removed Ordering Options Table (Tables 3 & 4).
Advanced Sector Protection/
Unprotection
Added Advanced Sector Protection/Unprotection figure. Added figures for PPB Erase & Program
Algorithm.
Electronic Marking
Added in Electronic Marking section.
Absolute Maximum Ratings
Modified VCC Ratings to reflect 2.6 V and 3.6 V devices. Modified VCC Ratings to reflect 16 Mb & 32
Mb devices.
AC Characteristics
Added Note “tOE during Read Array”.
Asynchronous Read Operation
Changed values of tAVAV, tAVQV, tELQV, tGLQV in table.
Conventional Read Operation Timings
Moved tDF line to 90% on the high-Z output in figure.
Burst Mode Read for 32 Mb & 16 Mb
Added tAAVS and tAAVH timing parameters to table. Changed tCH to tCLKH. Changed tCL to tCLKL.
Removed the following timing parameters:
tDS (Data Setup to WE# Rising Edge)
tDH (Data Hold from WE# Rising Edge)
tAS (Address Setup to Falling Edge of WE#)
tAH (Address Hold from Falling Edge of WE#)
tCS (CE# Setup Time)
tCH (CE# Hold Time)
tACS (Address Setup Time to CLK)
tACH (Address Hold Time from ADV# Rising Edge of CLK while ADV# is Low)
Burst Mode Read (x32 Mode)
Added the following timing parameters:
tAAVS
tDVCH
tINDS
tINDH
Asynchronous Command Write Timing
In figure, changed tOEH to tWEH; changed tWPH to tOEP.
Synchronous Command Write/Read
Timing
Removed tWADVH and tWCKS from figure.
WP# Timing
In figure, changed tCH to tBUSY
Erase/Program Operations
In table, added Note 3: Program/Erase parameters are the same regardless of synchronous or
asynchronous mode. Added tOEP (OE# High Pulse)
Alternative CE# Controlled Erase/
Program Operations
Removed tOES from table. Added tWADVS and tWCKS
Appendix 2: Command Definitions
Removed “or when device is in autoselect mode” from Note 14.
Revision B0 (June 12, 2006)
Global
Changed document status to Preliminary.
Distinctive Characteristics
Changed cycling endurance from typical to guaranteed.
Performance Characteristics
Updated Max Asynch. Access Time, Max CE# Access Time, and Max OE# Access time in table.
Ordering Information
Updated additional ordering options in designator breakout table. Updated valid combination tables.
相关PDF资料 |
PDF描述 |
|---|---|
| S29CL032J0JFFM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0RFAM012 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29GL032A10TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29GL032A10TAIR21 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
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相关代理商/技术参数 |
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| S29CL032J0MFAI030 | 制造商:Spansion 功能描述:32MBIT FLASH - Trays |
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| S29CL032J0RFAM010 | 制造商:Spansion 功能描述: |
| S29GL016A | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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