- 您现在的位置：买卖IC网 > PDF目录225140 > S29CL032J0JFAM020 (SPANSION LLC) 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 PDF资料下载
参数资料
| 型号： | S29CL032J0JFAM020 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件页数： | 75/79页 |
| 文件大小： | 2994K |
| 代理商： | S29CL032J0JFAM020 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页当前第75页第76页第77页第78页第79页
March 30, 2009 S29CD-J_CL-J_00_B3
S29CD-J & S29CL-J Flash Family
77
Data
She e t
Advanced Sector Protection/
Unprotection
Modified Advanced Sector Protection/Unprotection figure and notes. In some subsections, changed
“sector” to “sector group”.
DC Characteristics
Changed ICCB test conditions and ICC1 maximum specification.
Test Specifications
Changed CL.
Asynchronous Operations
Asynchronous Command Write Timing figure: Added note.
Asynchronous Read Operations table: Changed tRC, tACC, tCE for 75 MHz device.
Synchronous Operations
Burst Mode Read for 32 Mb and 16 Mb table: Changed tINDS, tCLKL, tAAVH, and tWADVH1
specifications.
Burst Mode Read figure: Modified period lengths for several specifications.
Erase/Program Operations
Added tWEH and tOEP specifications to table.
Latchup Characteristics
Deleted section.
Common Flash Memory Interface (CFI)
CFI System Interface String table: Modified description of address 1Bh.
CFI Primary Vendor-Specific Extended Query table: Modified data at address 45h.
Revision B3 (March 30, 2009)
Global
Removed “Preliminary”
Changed all instances of VCCQ to VIO
Distinctive Characteristics
Removed “or without” (wrap around) from Programmable Burst Interface bullet
Performance Characteristics
Added notice to refer to programming best practices application note for 32 Mb devices.
Ordering Information
Added S29CL032J to valid OPN diagram.
Corrected valid combinations table.
Input/Output Descriptions and Logic
Symbols
Subscript CC for VCC, IO for VIO, SS for VSS in table.
Changed type for VIO to “Supply”
Changed type for VSS to “Supply”
Block Diagram
Removed DQmax-DQ0 label from inputs to Burst Address Counter and Address Latch.
Removed Amax-A0 label from I/O Buffers.
Table: S29CD016J/CL016J (Top Boot)
Sector and Memory Address Map
Changed Note 2 to refer to Bank 0 and 1 instead of Bank 1 and 2.
Table: 32-Bit Linear and Burst Data
Order
Removed “x16”
Removed “A0:A-1” from Output Data Sequence column for Four Linear Data Transfers.
Removed “A1:A-1” from Output Data Sequence column for Eight Linear Data Transfers.
Programming
Added notice to refer to programming best practices application note for 32 Mb devices.
Table: DC Characteristic, CMOS
Compatible
Changed Max ICCB for S29CL-J to 90 mA.
Table: Burst Mode for 32 Mb and 16 Mb
Corrected values for tBDH with separate values for 16Mb and 32Mb.
Added tWADVS parameter to table.
Figure: Synchronous Command Write/
Read Timing
Added timing definition for tWADVS.
Table: Erase/Program Operations
Appended “from WE# Rising Edge” to tAH description.
Changed tAH Min to 11.75 ns.
Figure: Program Operation Timings
Updated timing diagram to reflect new tAH value.
Figure: Chip/Sector Erase Operation
Timings
Updated timing diagram to reflect new tAH value.
Table: Alternate CE# Controlled Erase/
Program Operations
Removed tWADVS parameter.
Product Overview
Removed “or without”.
Table: Device Bus Operation
Changed “X” to “H” under CLK column for CE# row.
Accelerated Program and Erase
Operations
Removed all mention of accelerated erase.
Unlock Bypass
Removed mention of unlock bypass sector erase.
Simultaneous Read/Write
Added in warning to indicate restrictions on Simultaneous Read/Write conditions.
Section
Description
相关PDF资料 |
PDF描述 |
|---|---|
| S29CL032J0JFFM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0RFAM012 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29GL032A10TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29GL032A10TAIR21 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR31 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29CL032J0MFAI030 | 制造商:Spansion 功能描述:32MBIT FLASH - Trays |
| S29CL032J0PQFM010 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32MBIT FLASH - Tape and Reel |
| S29CL032J0RFAM010 | 制造商:Spansion 功能描述: |
| S29GL016A | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
发布紧急采购，3分钟左右您将得到回复。