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参数资料
| 型号： | S29GL032M10TAIR52 |
| 厂商： | Spansion Inc. |
| 英文描述： | CAP TANT 220UF 2.5V 20% POLY SMD |
| 中文描述： | MirrorBit闪存系列 |
| 文件页数： | 12/159页 |
| 文件大小： | 5216K |
| 代理商： | S29GL032M10TAIR52 |
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Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBitTM Flash Family
109
Da tash eet
The system must write the Program Resume command (address bits are don’t care) to exit the Program Suspend
mode and continue the programming operation. Further writes of the Resume command are ignored. Another Pro-
gram Suspend command can be written after the device resumes programming.
Figure 5. Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior
to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero
data pattern prior to electrical erase. The system is not required to provide any controls or timings during these
operations. Table 35 on page 113 and Table 36 on page 114 show the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to
the “Write Operation Status” on page 115 section for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated
once the device returns to reading array data, to ensure data integrity.
Figure 6, on page 111 illustrates the algorithm for the erase operation. Refer to the “Erase and Programming Per-
formance” on page 141 in the “AC Characteristics” on page 124 section for parameters, and Figure 18, on
page 133 for timing diagrams.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Write Program Resume
Command Sequence
Read data as
required
Done
reading?
No
Yes
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Write address/data
XXXh/B0h
Wait 15
s
相关PDF资料 |
PDF描述 |
|---|---|
| S29GL032M10TAIR53 | CAP TANT 330UF 2.5V 20% POLY SMD |
| S29GL032M10TAIR60 | CAP TANT 470UF 4V 20% POLY SMD |
| S29GL032M10TAIR62 | CAP TANT 470UF 4V 20% POLY SMD |
| S29GL032M10TCCR22 | MirrorBit Flash Family |
| S29GL032M10TCCR23 | MirrorBit Flash Family |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032M10TAIR53 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR60 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR62 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR63 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TBCR00 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
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