参数资料
型号: S29GL256N80FAI010
厂商: SPANSION LLC
元件分类: PROM
英文描述: MirrorBit Flash Family
中文描述: 16M X 16 FLASH 3V PROM, 80 ns, PBGA64
封装: 13 X 11 MM, 1MM PITCH, FBGA-64
文件页数: 75/110页
文件大小: 2624K
代理商: S29GL256N80FAI010
May 13, 2004 27631A4
S29GLxxxN MirrorBitTM Flash Family
67
Ad va nc e
Inform ati o n
Figure 4. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 s time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5 s (maximum of 20 s) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to
the erase-suspend-read mode. The system can determine the status of the pro-
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 12 and Table 13 for program command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相关PDF资料
PDF描述
S29GL256N80FFI010 MirrorBit Flash Family
S29GL256N80FFI013 MirrorBit Flash Family
S29JL032H90TAI223 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
S29WS064N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S29GL256N90FFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 256M-Bit 32M x 8/16M x 16 90ns 64-Pin Fortified BGA Tray
S29GL256N90FFIR22 制造商:Spansion 功能描述:
S29GL256N90TFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 256Mbit 32M/16M x 8bit/16bit 90ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N90TFIR2 制造商:Spansion 功能描述:
S29GL256N90TFIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 256M-Bit 32M x 8/16M x 16 90ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:Flash - NOR IC