参数资料
型号: SC2544TSTRT
厂商: Semtech
文件页数: 13/22页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 24TSSOP
标准包装: 1
PWM 型: 电压模式
输出数: 2
频率 - 最大: 300kHz
占空比: 90%
电源电压: 4.5 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 24-TSSOP(0.173",4.40mm 宽)
包装: 标准包装
产品目录页面: 1358 (CN2011-ZH PDF)
其它名称: SC2544TSDKR
SC2544
POWER MANAGEMENT
Applications Information (Cont.)
I Q 2 , rms = I o ( 1 ? D )( 1 + 12 ) .
δ
Bottom Switch
The RMS current in bottom switch is given by
2
The conduction losses are then
P bc =I Q2,rms2 R ds(on) .
where R ds(on) is the channel resistance of bottom
MOSFET. If the input voltage to output voltage ratio
is high (e.g. V in =12V, V o =1.5V), the duty ratio D will
be small. Since the bottom switch conducts with duty
ratio (1-D), the corresponding conduction losses can
be quite high.
Main Control Loop Design
The goal of compensation is to shape the frequency
response charatericstics of the buck converter to
achieve a better DC accuracy and a faster transient
response for the output voltage, while maintaining
the loop stability.
The block diagram in Figure 10 represents the control
loop of a buck converter designed with the SC2544. The
control loop consists of a compensator, a PWM modula-
tor, and an LC filter.
The LC filter and PWM modulator represent the small
signal model of the buck converter operating at fixed
switching frequency. The transfer function of the
model is given by:
V 1 + sR ESR C
Due to non-overlapping conduction between the top and
the bottom MOSFET’s, the internal body diode or the
external Schottky diode across the drain and source
terminals always conducts prior to the turn on of the
V O
V C
= IN ?
V m 1 + sL / R + s 2 LC
bottom MOSFET. The bottom MOSFET switches on with
only a diode voltage between its drain and source
REF
+
PWM
L
Vo
terminals. The switching loss is negligible due to near zero-
voltage switching.
The gate losses are estimated as
R g
P bg =
Q g V cc f s .
R gt
REF
Zs
-
Zf
EA
MODULATOR
ERROUT
Co
Resr
The total bottom switch losses are then
T j , max ? T a , max
F O =
P b =P bc +P bg .
Once the power losses for the top and bottom
MOSFET ’s are known, thermal and package design
at component and system level should be done to
verify that the maximum die junction temperature
(T j,max , usually 125 o C) is not exceeded under the
worst-case condition. The equivalent thermal
impedance from junction to ambient ( θ ja ) should
satisfy
θ ja ≤ .
P loss
θ ja depends on the die to substrate bonding,
packaging material, the thermal contact surface,
thermal compound property, the available effective
Fig. 10. Block diagram of the control loop.
where V IN is the input voltage, Vm is the amplitude of
the internal ramp, and R is the equivalent load.
The model is a second order system with a finite DC
gain, a complex pole pair at Fo, and an ESR zero at
Fz, as shown in Figure 11. The locations of the poles
and zero are determined by:
1
2 π LC O
heat sink area, and the air flow condition (natual or
forced convection). Actual temperature measurement
of the prototype should be carried out to verify the
thermal design.
? 2005 Semtech Corp.
15
F Z =
1
2 π R e sr C O
www.semtech.com
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