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| 型号： | SI3402ISO-EVB |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL POE ISOL FOR SI3402 |
| 标准包装： | 1 |
| 主要目的： | 特殊用途 DC/DC，以太网供电（POE） |
| 输出及类型： | 1，隔离 |
| 输出电压： | 5V |
| 输入电压： | 44 ~ 57 V |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 350kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板，CD |
| 已用 IC / 零件： | Si3402 |
| 其它名称： | 336-1828 |
Si3402
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Description
|CT1 – CT2| or |SP1 – SP2|
Ambient Operating Temperature
Symbol
VPORT
TA
Min
2.8
–40
Typ
—
25
Max
57
85
Units
V
°C
Note: Unless otherwise noted, all voltages referenced to VNEG. All minimum and maximum specifications are guaranteed
and apply across the recommended operating conditions. Typical values apply at nominal supply voltage and ambient
temperature unless otherwise noted.
Table 2. Absolute Maximum Ratings 1
SP1 to SP2
VPOS
Type
Voltage
Current
Ambient Temperature
Description
CT1 to CT2 2
2
VPOS 3
HSO
V SS1 , V SS2 , or V SSA
V SS1 to V SS2 or V SSA
SWO 4
3
PLOSS to VPOS
RDET
VDD to VSS1, VSS2, or VSSA
CT1, CT2, SP1, SP2
3
Storage
Operating
Rating
–82 to 82
–82 to 82
–0.7 to 80
–0.7 to 80
–0.7 to 80
–0.3 to 0.3
–0.7 to 86
–80 to 0.7
–0.7 to 80
–0.3 to 5
–5 to 5
–5 to 5
–65 to 150
–40 to 85
Unit
V
A
°C
Notes:
1. Unless otherwise noted, all voltages referenced to VNEG. Permanent device damage may occur if the maximum
ratings are exceeded. Functional operation should be restricted to those conditions specified in the operational
sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may adversely affect
device reliability.
2. Transient surge is defined in IEC60060 as a 1000 V impulse of either polarity applied across CT1–CT2 or SP1–SP2.
The shape of the impulse shall have a 300 ns full rise time and a 50 μs half fall time, with 201 ? source impedance.
3. VPOS is equal to VPOSF and VPOSS tied together for test condition purposes.
4. SWO is referenced to V SS1 and V SS2 , which are normally tied together.
4
Rev. 1.31
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3403-A-GM | 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Trays 制造商:Silicon Laboratories Inc 功能描述:IC POE CTLR TO 17W LOW EMI 20QFN 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI) |
| Si3403-A-GMR | 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI) |
| SI3403DV-T1-E3 | 功能描述:MOSFET 20V 5.0A 3.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3403DV-T1-GE3 | 功能描述:MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3407DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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