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| 型号： | SI3402ISO-EVB |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 5/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL POE ISOL FOR SI3402 |
| 标准包装： | 1 |
| 主要目的： | 特殊用途 DC/DC，以太网供电（POE） |
| 输出及类型： | 1，隔离 |
| 输出电压： | 5V |
| 输入电压： | 44 ~ 57 V |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 350kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板，CD |
| 已用 IC / 零件： | Si3402 |
| 其它名称： | 336-1828 |
Si3402
Table 3. Surge Immunity Ratings 1,2,3
CDE 4
Type
Description
Cable discharge event tolerance
Air discharge (IEC 61000-4-2)
Rating
–3.5 to 3.5
–16.5 to 16.5
Unit
kV
kV
ESD (System-Level)
Contact discharge (IEC 61000-4-2)
–8 to 8
kV
ESD (CDM)
ESD (HBM)
Telephony Voltage
Compatibility
JEDEC (JESD22-C101C)
JEDEC (JESD22-A114E)
IEEE 802.3, Clause 33.5.6
–750 to 750
–2000 to 2000
175
V
V
Vp
Notes:
1. Permanent device damage may occur if the maximum ratings are exceeded. Functional operation should be restricted
to those conditions specified in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may adversely affect device reliability.
2. For more information regarding system-level surge tolerance, refer to “AN315: Robust Electrical Surge Immunity for
PoE PDs through Integrated Protection”.
3. Designs must be compliant with the PCB layout and external component recommendations outlined in the Si3402 EVB
User Guide and AN296.
4. J. Deatherage and D. Jones, “Multiple Factors Trigger Cable Discharge Events in Ethernet LANs,” Electronic Design
Dec. 4, 2000.
Rev. 1.31
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3403-A-GM | 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Trays 制造商:Silicon Laboratories Inc 功能描述:IC POE CTLR TO 17W LOW EMI 20QFN 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI) |
| Si3403-A-GMR | 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI) |
| SI3403DV-T1-E3 | 功能描述:MOSFET 20V 5.0A 3.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3403DV-T1-GE3 | 功能描述:MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3407DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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