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参数资料
| 型号： | SI4421-A0-FT |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 25/45页 |
| 文件大小： | 0K |
| 描述： | IC TXRX FSK 915MHZ 3.8V 16-TSSOP |
| 标准包装： | 96 |
| 频率： | 433MHz，868MHz，915MHz |
| 数据传输率 - 最大： | 256kbps |
| 调制或协议： | FSK |
| 应用： | ISM |
| 功率 - 输出： | 7dbm |
| 灵敏度： | -110dBm |
| 电源电压： | 2.2 V ~ 3.8 V |
| 电流 - 接收： | 15mA |
| 电流 - 传输： | 28mA |
| 数据接口： | PCB，表面贴装 |
| 天线连接器： | PCB，表面贴装 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 管件 |
| 产品目录页面： | 585 (CN2011-ZH PDF) |
| 其它名称： | 336-1737-5 |
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Si4421
14. Wake-Up Timer Command
Bit
15
1
14
1
13
1
12
r4
11
r3
10
r2
9
r1
8
r0
7
m7
6
m6
5
m5
4
m4
3
m3
2
m2
1
m1
0
m0
POR
E196h
The wake-up time period can be calculated by ( m7 to m0 ) and ( r4 to r0 ):
T wake-up = 1.03 · M · 2 R + 0.5 [ms]
Note:
? For continual operation, the ew bit should be cleared and set at the end of every cycle.
? For future compatibility, use R in a range of 0 and 29.
15. Low Duty-Cycle Command
Bit
15
1
14
1
13
0
12
0
11
1
10
0
9
0
8
0
7
d6
6
d5
5
d4
4
d3
3
d2
2
d1
1
d0
0
en
POR
C80Eh
With this command, autonomous low duty-cycle operation can be set in order to decrease the average power consumption in receive
mode.
Bits 7-1 ( d6-d0 ):
The duty-cycle can be calculated by using ( d6 to d0 ) and M. (M is parameter in a Wake-Up Timer Command , see
above). The time cycle is determined by the Wake-Up Timer Command .
duty-cycle= (D · 2 +1) / M · 100%
Bit 0 (en) : Enables the low duty-cycle Mode. Wake-up timer interrupt is not generated in this mode.
Note: In this operation mode, bit er must be cleared and bit ew must be set in the Power Management Command (page 15) .
In low duty-cycle mode the receiver periodically wakes up for a short period of time and checks if there is a valid FSK transmission in
progress. FSK transmission is detected in the frequency range determined by Frequency Setting Command (page 17) plus and
minus the baseband filter bandwidth determined by the Receiver Control Command (page 17). This on-time is automatically
extended while DQD indicates good received signal condition.
When calculating the on-time take into account:
-
-
the crystal oscillator, the synthesizer and the PLL needs time to start, see the AC Characteristics (Turn-on/Turnaround
timings) on page 11
depending on the DQD parameter, the chip needs to receive a few valid data bits before the DQD signal indicates good
signal condition ( Data Filter Command , page 19)
Choosing too short on-time can prevent the crystal oscillator from starting or the DQD signal will not go high even when the received
signal has good quality.
There is an application proposal on page 26. The Si4421 is configured to work in FIFO mode. The chip periodically wakes up and
switches to receiving mode. If valid FSK data received, the chip sends an interrupt to the microcontroller and continues filling the RX
FIFO. After the transmission is over and the FIFO is read out completely and all other interrupts are cleared, the chip goes back to low
power consumption mode.
25
相关PDF资料 |
PDF描述 |
|---|---|
| 230-50-LPI | XFRMR 115/230V 50MA 12VA PCB |
| SI4421-A1-FT | IC TXRX FSK 915MHZ 3.8V 16-TSSOP |
| 30-400-LPI | XFRMR PWR 115/230V 30VCT 400MA |
| 56-200-LPI | XFRMR PWR 115/230V 56VCT 200MA |
| ASFL1-33.333MHZ-EC-T | OSCILLATOR 33.3330 MHZ 3.3V SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| Si4421-A0-FTR | 功能描述:射频收发器 Transceiver-EZRadio RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
| Si4421-A1-FT | 功能描述:射频收发器 TRANSCEIVR EZRadio UNIVRSL ISM BAND FSK RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
| SI4421-A1-FTR | 功能描述:射频收发器 Transceiver EZRadio RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
| SI4421DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI4421DY-T1 | 功能描述:MOSFET 20V 14A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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