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| 型号： | SI6924AEDQ-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 28V ESD 8-TSSOP |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 28V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | SI6924AEDQ-T1-GE3DKR |
Si6924AEDQ
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
FEATURES
V DS (V)
28
R DS(on) ( Ω )
0.033 at V GS = 4.5 V
0.038 at V GS = 3.0 V
0.042 at V GS = 2.5 V
I D (A)
4.6
4.3
4.1
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?
?
?
?
Halogen-free
Low R DS(on)
V GS Max Rating: 14 V
Exceeds 2 kV ESD Protection
28 V V DS Rated
RoHS
COMPLIANT
DESCRIPTION
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Symmetrical Voltage Blocking (Off Voltage)
The Si6924AEDQ is a dual N-Channel MOSFET with ESD
stage diode is designed to protect the gate from any
protection and gate over-voltage
protection circuitry
remaining ESD energy and over-voltages above the gates
incorporated into the MOSFET. The device is designed for
use in Lithium Ion battery pack circuits. The common-drain
construction takes advantage of the typical battery pack
topology, allowing a further reduction of the device’s on-
resistance. The 2-stage input protection circuit is a unique
design, consisting of two stages of back-to-back zener
diodes separated by a resistor. The first stage diode is
designed to absorb most of the ESD energy. The second
APPLICATION CIRCUITS
inherent safe operating range. The series resistor used to
limit the current through the second stage diode during over
voltage conditions has a maximum value which limits the
input current to ≤ 10 mA at 14 V and the maximum t off to 12
μs. The Si6924AEDQ has been optimized as a battery or
load switch in Lithium Ion applications with the advantage of
both a 2.5 V R DS(on) rating and a safe 14 V gate-to-source
maximum rating.
ESD and
Overvoltage
Protection
Battery Protection Circuit
ESD and
Overvoltage
Protection
D
R**
G
S
**R typical value is 3.3 k Ω by design.
See Typical Characteristics,
*Thermal connection to drain pins is required to achieve specific performance
Figure 1. Typical Use In a Lithium Ion Battery Pack
Document Number: 72215
S-81056-Rev. B, 12-May-08
Gate-Current vs. Gate-Source Voltage, Page 3.
Figure 2. Input ESD and Overvoltage Protection Circuit
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI6924EDQ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
| SI6924EDQ-T1 | 功能描述:MOSFET 28V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6925ADQ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6925ADQ_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6925ADQ-T1-E3 | 功能描述:MOSFET 20V 3.9A 0.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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