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参数资料
型号： SI7457DP-T1-GE3
厂商： Vishay Siliconix
文件页数： 2/9页
文件大小： 0K
描述： MOSFET P-CH D-S 100V PPAK 8SOIC
标准包装： 3,000
系列： TrenchFET®
FET 型： MOSFET P 通道，金属氧化物
FET 特点： 标准
漏极至源极电压(Vdss)： 100V
电流 - 连续漏极(Id) @ 25° C： 28A
开态Rds（最大）@ Id, Vgs @ 25° C： 42 毫欧 @ 7.9A，10V
Id 时的 Vgs(th)（最大）： 4V @ 250µA
闸电荷(Qg) @ Vgs： 160nC @ 10V
输入电容 (Ciss) @ Vds： 5230pF @ 50V
功率 - 最大： 83W
安装类型： 表面贴装
封装/外壳： PowerPAK? SO-8
供应商设备封装： PowerPAK? SO-8
包装： 带卷 (TR)
Si7457DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 100
- 105
7
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
-2
-3
-4
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = - 100 V, V GS = 0 V
V DS = - 100 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = - 10 V
- 35
± 100
-1
- 10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = - 10 V, I D = - 7.9 A
V GS = - 6 V, I D = - 6.3 A
V DS = - 15 V, I D = - 7.9 A
0.034
0.036
30
0.042
0.045
Ω
S
Dynamic
b
Input Capacitance
C iss
5230
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 50 V, V GS = 0 V, f = 1 MHz
230
165
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 50 V, V GS = - 10 V, I D = - 7.9 A
V DS = - 50 V, V GS = - 6 V, I D = - 7.9 A
105
67
21
160
100
nC
Gate-Drain Charge
Q gd
44
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = - 50 V, R L = 7.9 Ω
I D ? - 6.3 A, V GEN = - 10 V, R g = 1 Ω
4.1
30
115
80
50
175
120
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
60
20
90
30
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 50 V, R L = 7.9 Ω
I D ? - 6.3 A, V GEN = - 6 V, R g = 1 Ω
30
105
60
45
160
90
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
- 28
- 35
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 6.3 A
I F = - 6.3 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.8
60
180
48
12
- 1.2
90
270
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73431
S09-0273-Rev. C, 16-Feb-09
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