参数资料
型号: SIC413CB-T1-E3
厂商: Vishay Siliconix
文件页数: 7/18页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 4A 8SOIC
标准包装: 1
系列: microBUCK®
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.6 V ~ 13.2 V
输入电压: 4.75 V ~ 26 V
PWM 型: 电压模式
频率 - 开关: 500kHz
电流 - 输出: 4A
同步整流器:
工作温度: -25°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 标准包装
供应商设备封装: 8-SOIC
其它名称: SIC413CB-T1-E3DKR
SiC413
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
EN: 2 V/div
COMP: 500 mV/div
V O : 1 V/div
t: 200 μs/div
V O : 1 V /div
I L : 1 A/div
t: 1 ms/div
I L : 1 A/div
EN: 2 V/div
COMP: 200 mV/div
System starts up with EN pin becoming HIGH while
V IN is ready. V IN = 12 V, V O = 3.3 V and I O is preset to about
3 A. Resistive load.
V O : 1 V/div
V O : 20 mV/div
I L : 1 A/div
V SW : 5 V/div
t: 500 ns/div
V O ripple and V SW switching waveform. V IN = 12 V,
V O = 3.3 V and L = 10 μH (IHLP2525EZ type). C O consists
of MLCC of 4.7 μF and tantalum of 100 μF/20 V x 2
System shuts down with EN pin becoming LOW.
V IN = 12 V, V O = 3.3 V and I O comes down from about 3 A.
V O : 100 mV/div
I L : 2 A/div
t: 50 μs/div
Transient response. V IN = 12 V, V O = 3.3 V and L = 10 μH
(IHLP2525EZ type). C O consists of MLCC of 4.7 μF and
tantalum of 100 μF/20 V x 2. Output current steps up and
down between 0.4 A and 4 A with less than 1 μs rising and
falling time.
t: 20 ms/div
V SW : 10 V/div
V O : 1 V/div
COMP: 500 mV/div
I L : 5 A/div
Overcurrent protection at I O = 8 ~ 10 A. V IN = 12 V, V O = 3.3
V and L = 10 μH (IHLP2525EZ type). C O consists of MLCC
of 4.7 μF and tantalum of 100 μF/20 V x 2
Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
www.vishay.com
7
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