参数资料
| 型号： | SIC413CB-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/18页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 4A 8SOIC |
| 标准包装： | 1 |
| 系列： | microBUCK® |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 13.2 V |
| 输入电压： | 4.75 V ~ 26 V |
| PWM 型： | 电压模式 |
| 频率 - 开关： | 500kHz |
| 电流 - 输出： | 4A |
| 同步整流器： | 是 |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 供应商设备封装： | 8-SOIC |
| 其它名称： | SIC413CB-T1-E3DKR |
SiC413
Vishay Siliconix
DETAILED OPERATIONAL DESCRIPTION
Input Voltage (V IN )
The input voltage pin on the SiC413CB provides the bias
supply for the PWM controller IC and the MOSFET driver
circuitry. This pin also is internally connected to the drain of
the high side MOSFET.
Feedback (FB) and Output Voltage (V O )
The FB pin is the negative input of the internal error amplifier.
This pin connects to the center of the output voltage divider,
through a 10K ~ 100K resistor (for noise isolation). When in
regulation the FB voltage is 0.6 V. The output voltage V O is
set based on the following formula.
V O = V REF (1 + R1/R2)
where R1 and R2 are shown in Figure 4.
Enable (EN)
CMOS logic signal. In the low state, the EN pin shuts down
the driver IC and disables both high-side and low-side
MOSFETs. An internal pull up resistor will enable the device
if this pin is left open. An external pull up of 10 k Ω to 100 k Ω
is recommended for better noise immunity.
Soft-Start (SS)
This device allows typical 5 ms soft start time to prevent
inrush current during system startup. The soft start cycle
starts when EN is asserted (low to high).
Under Voltage Lockout (UVLO)
The SiC413CB incorporates an under voltage lockout circuit
to keep the device disabled when the input voltage (V IN ) is
below x.xx V typical. During power up, internal circuits are
held inactive until V IN exceeds the nominal UVLO threshold
voltage. Once the UVLO rising threshold is reached, the
device start-up begins. The device keeps operating unless
V IN drops below UVLO falling threshold. The nominal
200 mV UVLO hysteresis and 2.5 μs rising and falling edge
de-glitch circuit reduce the likelihood of the device shutdown
due to noise on V IN .
Switch Node (V SW )
The switch node is the interconnection between the and
high- and low-side MOSFETs. Connect the output inductor to
this pin. Also, this node is the return path for the bootstrap
capacitor.
Bootstrap Circuit (BOOT)
A diode and a capacitor form a bootstrap circuit that powers
high-side MOSFET driver. SiC413 has this diode built in and
therefore only an external capacitor is required to form this
circuit. This capacitor is connected between BOOT pin and
V SW pin.
Over Temperature Protection (OTP)
OTP provides thermal protection to the controller and power
MOSFETs when an overload condition occurs. When the
junction temperature of the SiC413CB exceeds nominal 165
°C (OTP trip point), the power MOSFETs will be turned off
www.vishay.com
8
and the controller will be disabled. The device will
automatically restart when the junction temperature drops
to nominal 20 °C below its trip point. After the thermal
protection is deasserted, a regular soft start cycle will be
initiated.
Over Voltage Protection (OVP)
When the feedback voltage on FB pin exceeds 120 % of
V REF , the over voltage condition is asserted. When over
voltage occurs, the controller will turn on low-side MOSFET
and turn off high-side MOSFET to discharge the excessive
output voltage. The over voltage condition is removed when
the voltage on FB pin drops to below 110 % of V REF .
Over Current Protection (OCP)
The SiC413CB integrates all components required for over
current protection. This achieved by sensing the current
flowing through the Low-side MOSFET. When low-side
MOSFET is turned on, the current flowing through it will
generate a voltage drop determined by its R DS(ON) . After a
blanking time delay (to ignore switching noise), this voltage
is compared to a reference that corresponds to a preset
overcurrent threshold (typical 7 A peak). If the voltage drop
on low-side MOSFET is higher than the preset reference, an
overcurrent protection event occurs. This triggers the PWM
controller to keep the low side MOSFET on until the inductor
current discharges to a level below the over current
protection threshold. This lowers the duty cycle and causes
the output voltage to droop.
The SiC413CB overcurrent fault mode is designed to protect
against false triggering.An overcurrent event is defined as
starting when the overcurrent threshold is tripped and ending
when the inductor current in the low side MOSFET is below
the overcurrent trheshold. Seven sequential overcurrent
events are required to place the SiC413CB into the over cur-
rent fault mode.
Overcurrent events are counted by an up down counter. If
the overcurrent state is detected, the counter counts 1 up
otherwise it counts 1 down. If the count reaches 7, the device
will enter fault mode and both high- and low-side MOSFETs
will turn off for 15 PWM clock cycles. After this period, the
device will initiate a regular soft start. This sequence repeats
until the overcurrent is completely removed. This is often
referred to as hiccup mode. If the counter does not reach the
count of 7. The SiC413CB does not enter into the overcurrent
fault mode and operation is not disrupted.
Shoot-Through Protection (Break-Before-Make: BBM)
The SiC413CB has an internal break-before-make function
to ensure that both high- and low-side MOSFETs are not
turned on at the same time.
An internal circuit detects the falling edge of both high- and
low-side gate drive. The low-side MOSFET is turned on only
after the high-side gate voltage is less than V BBM , similarly
the high-side MOSFET gate is turned on after a fixed dead-
time after the low side gate is less than V BBM. This Break-
Before-Make time parameter is not user adjustable.
Document Number: 69057
S09-2250-Rev. D, 26-Oct-09
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