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| 型号： | SIC424CD-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 12/24页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 6A 44MLP-28 |
| 标准包装： | 1 |
| 系列： | microBUCK® |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.75 V ~ 5.5 V |
| 输入电压： | 3 V ~ 28 V |
| 频率 - 开关： | 200kHz ~ 1MHz |
| 电流 - 输出： | 6A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 28-MLPQ（4x4） |
| 其它名称： | SIC424CD-T1-GE3DKR |
SiC414, SiC424
Vishay Siliconix
SmartDrive TM
FB Ripple
Voltage
(V FB )
Inductor
Dead time varies
according to load
FB threshold
(750 mV)
Zero (0 A)
For each DH pulse the DH driver initially turns on the high
side MOSFET at a lower speed, allowing a softer, smooth
turn-off of the low-side diode. Once the diode is off and the
LX voltage has risen 0.5 V above P GND , the SmartDrive
circuit automatically drives the high-side MOSFET on at a
rapid rate. This technique reduces switching losses while
maintaining high efficiency and also avoids the need for
Current
On-time (T ON )
snubbers for the power MOSFETs.
Current Limit Protection
The device features programmable current limiting, which is
DH
DL
DH On-time is triggered when
V FB reaches the FB Threshold
DL drives high when on-time is completed.
DL remains high until inductor current reaches zero.
Figure 6 - Power-Save Mode Operation
accomplished by using the R DS(ON) of the lower MOSFET for
current sensing. The current limit is set by RILIM resistor.
The R ILIM resistor connects from the ILIM pin to the LXS pin
which is also the drain of the low-side MOSFET. When the
low-side MOSFET is on, an internal ~ 8 μA current flows from
the ILIM pin and through the R ILIM resistor, creating a voltage
drop across the resistor. While the low-side MOSFET is on,
the inductor current flows through it and creates a voltage
across the R DS(ON) . The voltage across the MOSFET is neg-
ative with respect to ground. If this MOSFET voltage drop
exceeds the voltage across R ILIM , the voltage at the ILIM pin
Smart Power-Save Protection
Active loads may leak current from a higher voltage into the
switcher output. Under light load conditions with power-save
mode enabled, this can force V OUT to slowly rise and reach
the over-voltage threshold, resulting in a hard shutd-own.
Smart power-save prevents this condition.
When the FB voltage exceeds 10 % above nominal, the
device immediately disables power-save, and DL drives high
to turn on the low-side MOSFET. This draws current from
V OUT through the inductor and causes V OUT to fall. When
V FB drops back to the 750 mV trip point, a normal t ON
switching cycle begins.
This method prevents a hard OVP shutdown and also cycles
energy from V OUT back to V IN . It also minimizes operating
power by avoiding forced conduction mode operation.
Figure 7 shows typical waveforms for the smart power-save
feature.
will be negative and current limit will activate. The current
limit then keeps the low-side MOSFET on and will not allow
another high-side on-time, until the current in the low-side
MOSFET reduces enough to bring the ILIM voltage back up
to zero. This method regulates the inductor valley current at
the level shown by ILIM in figure 8.
I PEAK
I LOAD
I LIM
Time
Figure 8 - Valley Current Limit
Setting the valley current limit to 6 A results in a 6 A peak
inductor current plus peak ripple current. In this situation, the
average (load) current through the inductor is 6 A plus
V OUT drifts u p to d u e to leakage
c u rrent flo w ing into C OUT
Smart po w er sa v e
threshold ( 8 25 m V )
FB
threshold
DH and DL off
High-side
dri v e (DH)
Single DH on-time p u lse
after DL t u rn-off
Lo w -side
dri v e (DL)
DL t u rns on w hen smart
PSA V E threshold is reached
DL t u rns off FB
threshold is reached
V OUT discharges v ia ind u ctor
and lo w -side MOSFET
N ormal V OUT ripple
N ormal DL p u lse after DH
on-time p u lse
one-half the peak-to-peak ripple current.
The internal 8 μA current source is temperature
compensated at 4100 ppm in order to provide tracking with
the R DS(ON) . The R ILIM value is calculated by the following
equation.
R ILIM = 1250 x I LIM x [0.088 x (5 V - V5V) + 1]
When selecting a value for R ILIM do not exceed the absolute
maximum voltage value for the ILIM pin. Note that because
the low-side MOSFET with low R DS(ON) is used for current
sensing, the PCB layout, solder connections, and PCB
connection to the LX node must be done carefully to obtain
good results. R ILIM should be connected directly to LXS
(pin 24).
Figure 7 - Smart Power-Save
www.vishay.com
12
For technical questions, contact: powerictechsupport@vishay.com
Document Number: 63388
S13-0248-Rev. B, 04-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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