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| 型号： | SIHF6N40D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 6A TO-220 FPAK |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1000 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 311pF @ 100V |
| 功率 - 最大： | 30W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220 整包 |
| 包装： | 散装 |
SiHF6N40D
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
65
4.1
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 30 V
V DS = 400 V, V GS = 0 V
V DS = 320 V, V GS = 0 V, T J = 125 °C
400
-
3
-
-
-
-
0.53
-
-
-
-
-
-
5
± 100
1
10
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 3 A
-
0.85
1.0
?
Forward Transconductance
g fs
V DS = 50 V, I D = 3 A
-
1.7
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1 MHz
-
-
-
311
38
7
-
-
-
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Total Gate Charge
C o(er)
C o(tr)
Q g
V GS = 0 V,
V DS = 0 V to 320 V
-
-
-
44
54
9
-
-
18
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 3 A, V DS = 320 V
-
3
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
4
12
-
24
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 400 V, I D = 3 A,
V GS = 10 V, R g = 9.1 ?
f = 1 MHz, open drain
-
-
-
-
11
14
8
1.9
22
28
16
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
6
24
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 3 A, V GS = 0 V
T J = 25 °C, I F = I S = 3 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
236
1.1
9
1.2
-
-
-
V
ns
μC
A
Notes
a. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DS .
b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DS .
S12-0687-Rev. A, 02-Apr-12
2
Document Number: 91501
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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