参数资料
型号: SIHF6N40D-E3
厂商: Vishay Siliconix
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 400V 6A TO-220 FPAK
标准包装: 1,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 400V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 1000 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 18nC @ 10V
输入电容 (Ciss) @ Vds: 311pF @ 100V
功率 - 最大: 30W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220 整包
包装: 散装
SiHF6N40D
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
15
TOP
15 V
14 V
13 V
T J = 25 °C
3
11 V
12
12 V
11 V
10 V
2.5
I D = 3 A
9V
9
8V
7V
6V
2
BOTTOM 5 V
1.5
6
1
3
0
0.5
0
V GS = 10 V
0
5
10
15
20
25
30
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
T J , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
TOP
15 V
14 V
13 V
T J = 150 °C
8
6
12 V
11 V
10 V
9V
8V
7V
BOTTOM 6 V
100
C i ss
V GS = 0 V, f = 1 MHz
C i ss = C g s + C gd , C d s S horted
C r ss = C gd
C o ss = C d s + C gd
C o ss
4
10
2
C r ss
0
5V
1
0
5
10
15
20
25
30
0
50
100
150
200
250
300
350
400
16
V DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
V D S , Drain-to- S ource Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24
V D S = 320 V
12
20
16
V D S = 200 V
V D S = 80 V
8
T J = 150 °C
12
8
4
4
T J = 25 °C
0
0
0
5
10
15
20
25
0
4
8
12
16
V GS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q g , Total G ate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-0687-Rev. A, 02-Apr-12
3
Document Number: 91501
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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