参数资料
型号: SIHVM7.5
厂商: SENSITRON SEMICONDUCTOR
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, SILICON, SIGNAL DIODE
文件页数: 10/14页
文件大小: 98K
代理商: SIHVM7.5
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 249798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 962, REV. -
HIGH VOLTAGE, HIGH DENSITY, LEADED
INDUSTRIAL GRADE SILICON RECTIFIER ASSEMBLY
FEATURES:
Low forward voltage drop
V
R = 5000V – 25000V
Low reverse leakage current
I
F = 0.5A
High thermal shock resistance
I
R = 1.0A
Corona free construction
I
FSM = 50A
Low distributed capacitance
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
IF(AV)
Amps
FORCED
AIR @ 600
CFM, 55
°C
IN STILL
OIL @
55
°C
1 CYCLE
SURGE
CURRENT
IFSM
tp = 8.3ms
@ TJ MAX
I
2t
tp = 8.3ms
@ TJ MAX
REPETITIVE
SURGE
CURRENT
IFRM @ 25
°C
PACKAGE
LENGTH
Volts
55
°C
100
°C
Amps
A
2S
Amps
Inches
SICH5000
SIICH7500
SCH10000
SICH12500
SICH15000
SICH20000
SICH25000
5000
7500
10000
12500
15000
20000
25000
0.5
0.33
1.0
30
12
10
1.145
1.645
2.020
2.395
2.770
3.520
4.270
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
Amps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME
trr @ 25
°C
25
°C
100
°C
V
A
sec
SICH5000
SICH7500
SICH10000
SICH12500
SICH15000
SICH20000
SICH25000
1.0
20
5.0
8.0
10.0
13.0
15.0
20.0
25.0
1.0
5.0
Notes:
- Operating temperature range –40 to +125°C.
- Storage temperature range –40 to +125°C.
Measured on discrete devices prior to assembly.
SICH5000
SICH7500
SICH10000
SICH12500
SICH15000
SICH20000
SICH25000
相关PDF资料
PDF描述
SICH20000 0.5 A, SILICON, SIGNAL DIODE
SIHVM12.5 0.5 A, SILICON, SIGNAL DIODE
SICH12500 0.5 A, SILICON, SIGNAL DIODE
SICF12500 0.5 A, SILICON, SIGNAL DIODE
SICH5000 0.5 A, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
SiHW22N65E-GE3 功能描述:MOSFET 650V 180mOhms@10V 22A N-Ch E-SRS RoHS:否 制造商:Vishay / Siliconix 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:+/- 20 V 漏极连续电流:22 A 电阻汲极/源极 RDS(导通):0.18 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-247 AD 封装:Bulk
SIHW23N60E-GE3 功能描述:MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS RoHS:否 制造商:Vishay / Siliconix 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:20 V 漏极连续电流:23 A 电阻汲极/源极 RDS(导通):0.158 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-247AD-3 封装:Bulk
SIHW30N60E-GE3 功能描述:MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHW30N60E-GE3 制造商:Vishay Siliconix 功能描述:MOSFET N CH 600V 29A TO-247AD-3 制造商:Vishay Siliconix 功能描述:MOSFET, N CH, 600V, 29A, TO-247AD-3
SIHW33N60E-GE3 功能描述:MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube